型号: | MGF0951P |
元件分类: | 功率晶体管 |
英文描述: | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
封装: | PLASTIC, LEADLESS PACKAGE-3 |
文件页数: | 1/42页 |
文件大小: | 1232K |
代理商: | MGF0951P |
相关PDF资料 |
PDF描述 |
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MGF4314E-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
MGF4318E-30 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
MGFC4416D-02 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
MGF4315C-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
MGF4316C-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
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MGF0951P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF0952P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
MGF0952P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF0953P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF0953P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |