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参数资料
| 型号： | MGF4851A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 代理商： | MGF4851A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(3/5)
June/2004
TYPICAL CHARACTERISTICS
(Ta=25
°C)
0.00
5.00
10.00
15.00
20.00
-10
-5
0
5
10
Input Power Pin (dBm)
O
u
tpu
t
P
o
w
e
r
P
o
(d
B
m
)
Po vs. Pin
VDS=2.5V
ID=25mA
f=12GHz
ID vs. VDS
ID vs. VGS
0
10
20
30
40
50
60
70
80
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
GATE TO SOURCE VOLTAGE
VGS(V)
D
R
A
IN
CU
R
E
N
T
ID
(m
A
)
VDS=2V
Po vs. Pin
0
5
10
15
20
-10
-5
0
5
10
Input Power Pin (dBm)
O
u
tpu
t
P
o
w
e
r
P
o
u
t
(d
B
m
)
VDS=2V
ID=10mA
f=12GHz
0
10
20
30
40
50
60
70
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
D
R
A
IN
C
U
R
E
N
T
ID
(m
A
)
VGS=-0.1V/STEP
VGS=0V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF4910D | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4910E | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4914D | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4914E | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4916 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
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