- 您现在的位置：买卖IC网 > PDF目录97602 > MGF4914D-65 K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF资料下载
参数资料
| 型号： | MGF4914D-65 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件页数： | 1/5页 |
| 文件大小： | 298K |
| 代理商： | MGF4914D-65 |
MGF431OD Series
L1~o-
o~i -oqof-
SUPER LOW NOISE InOaAs HEMT
DESCRIPTION
The MGF431OD series super-low-noise HEMT (High
Electron Mobility Transistor) is designed for use in X to
K band amplifiers. The hermetically sealed metal-ceramic
package assures minimum parasitic losses, and has a
configuration suitable for microstrip circuits.
FEATURES
Low noise figure
@f=12GHz
MGF4314D: NFmin.=1.OOdB (MAX)
MGF4316D: NFmin.=O.8OdB (MAX)
MGF4317D: NFmin.=O.7OdB (MAX)
MGF4318D: NFmin.=O.6OdB (MAX)
High associated gain Gs=9.5dB(MIN)
@f= 12GHz
APPLICATION
X to K band super-low-noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
Vos2V lo~lOmA
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta-25~)
OUTLINE DRAWING
Unit millimeters linchesl
4MIN.
1.85±0.2
4MIN.
I
SiM IN.) (0.073 ±0.008) (0.1 S7MIN.)
C’..
o d
+14-I
in in
0
in
WC%J
—
—0
00
~
+ I
00
GATE
-
+1
d
~
~Zl
SOURCE
GD-4
~~RAtN
p1.8±0.2
(0.07 1 ±0.008)
~LFT1
Symbol
Parameter
Ratings
Unit
V000
Gate to drain voltage
—4
V
V050
Gate to source voltage
—4
V
Drain cunent
60
mA
PT
Total power dissipation
so
mW
Tolt
Channel temperature
125
‘C
Tstg
Storage temperature
—65— + 125
‘C
ELECTRICAL CHARACTERISTICS (Ta=25~
Symbol
Parameter
Test conditions
Umits
Unit
Mm
Typ
Max
V(BR)000
Gate to drain breakdown voltage
lo~ — lOOpA
—
V
V(BR)0SO
Gatetosourcebraaltdownvoltage
1a
100pA
~3
—
V
loss
Gate to source leakage current
Vcs= —2V, vos~sov
—
50
pA
toss
Saturated drain current
v05=ov, Vos=2V
10
20
60
mA
VOS(on)
Gatato source cut-off voltage
VOS~2V, lo~5O0pA
—0.1
1.5
V
Transconductance
Vos=2V, Io=lOmA
40
60
—
mS
Ga
Associated gain
VDS=2V, lo=1OmA. t=12G1-lz
9.5
11.5
—
dB
NFmin
Minimumnoiseflgure
MGF43140
—
0.80
1.00
dO
MGF43160
—
0.75
0.80
dO
MGF43170
—
0.65
0.70
dO
MGF43180
—
0.55
0.60
dO
Rth (oh-a)
Thermal Resistance
*1
~Vf method
* 1: Channel to ambient
—
625
C/W
A
相关PDF资料 |
PDF描述 |
|---|---|
| MGF4714AP-65 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4318E-01 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4318D-01 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4317D-01 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4314D-65 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF4914E | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4916 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4916D | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4916G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4917D | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
发布紧急采购，3分钟左右您将得到回复。