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参数资料
| 型号： | MGF4921AM |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | GD-30, 4 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 173K |
| 代理商： | MGF4921AM |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4921AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
MITSUBISHI
(1/9)
Ｍ
Ｍar./2009
DESCRIPTION
The MGF4921AM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure
NFmin. = 0.35dB (Typ.)
@ f=2.4GHz
NFmin. = 0.35dB (Typ.)
@ f=4GHz
High associated gain
Gs = 18.0dB (Typ.)
@ f=2.4GHz
Gs = 13.0dB (Typ.)
@ f=4GHz
APPLICATION
L to C band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V, ID=10~25mA
ORDERING INFORMATION
Tape & reel
3000pcs/reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-3
V
VGSO
Gate to source voltage
-3
V
ID
Drain current
IDSS
mA
PT
Total power dissipation
130
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-55 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
Symbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
IG=-78A
-3.5
--
V
IGSS
Gate to source leakage current
VGS=-2V,VDS=0V
--
50
A
IDSS
Saturated drain current
VGS=0V,VDS=2V
30
--
150
mA
VGS(off)
Gate to source cut-off voltage
VDS=2V,ID=390A
-0.2
--
-1.5
V
Gs
Associated gain
VDS=2V,
--
18
--
dB
NFmin.
Minimum noise figure
ID=10mA, f=2.4GHz
--
0.35
--
dB
Gs
Associated gain
VDS=2V,
11.5
13
--
dB
NFmin.
Minimum noise figure
ID=15mA, f=4GHz
--
0.35
0.55
dB
Note) Gs and NFmin. @4GHz are tested with sampling inspection.
Gs and NFmin. @2.4GHz are not tested.
Outline Drawing
Fig.1
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate
measure such as (I) placement of substitutive, auxiliary circuits, (ii) use of non-
flammable material or (iii) prevention against any malfunction or mishap.
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF4931AM | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_07 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_08 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934BM | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
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