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参数资料
| 型号： | MGFC38V5964-01 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 文件页数： | 1/2页 |
| 文件大小： | 75K |
| 代理商： | MGFC38V5964-01 |
相关PDF资料 |
PDF描述 |
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| MGFC38V6472-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC38V6472-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V3742-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V3742-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V4450A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC38V6472 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V6472_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V6472_97 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET |
| MGFC39V3436 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V3436_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
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