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参数资料
| 型号： | MGFC39V5258 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 301K |
| 代理商： | MGFC39V5258 |
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PDF描述 |
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| MGFC39V5867 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V6471-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V6472A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V6472A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC39V5258_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V5258_97 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5864 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5867_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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