| 型号: | MGFC39V5964-01 |
| 元件分类: | 功率晶体管 |
| 英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装: | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件页数: | 1/2页 |
| 文件大小: | 0K |
| 代理商: | MGFC39V5964-01 |

相关PDF资料 |
PDF描述 |
|---|---|
| MGFC39V7177A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V3742-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V5964A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V5964A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V7785-51 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC39V5964A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V5964A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5964A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V6472A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V6472A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET |