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参数资料
| 型号： | MGFC45V5964A |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 5月9日至六月四号GHz频段32W内部匹配砷化镓场效应管 |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | MGFC45V5964A |
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5964A
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V
DS
= 10V
ID = 8 A
Rg=25 ohm Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
30
A
IGR
Reverse gate current
-60
mA
IGF
Forward gate current
126
mA
PT
Total power dissipation
125
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65/+175
deg.C
*1 : Tc=25 Deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Typ
Unit
Min
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
24
-
A
Gm
Transconductance
VDS = 3V , ID = 8A
-
8
-
S
VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 160mA
Output power at 1dB gain
compression
GLP
Linear power gain
-
-
-5
V
P1dB
44.5
45
-
dBm
VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz
8
9
-
dB
PAE
Power added efficiency
-
33
-
%
IM3
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) Thermal resistance *1
Delta Vf method
-
1.0
Deg.C/W
*1 : Channel to case
*2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification.
Some parametric limits are subject to change.
24 +/- 0.3
16.7
20.4 +/- 0.2
OUTLINE DRAWING Unit:millimeters (inches)
GF-38
4
4
.
3
+
/
-
-
.
0
4
1
.
4
2
M
I
N
R1.2
8
.
0
+
/
-
0
.
2
1
7
.
2
M
I
N
(1)
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
(3)
0
.
1
/
+
.
0
2
4
+
/
-
0
.
2
(2)
0.6 +/- 0.15
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相关代理商/技术参数 |
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|---|---|
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC47A4450 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47A7785 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
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