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参数资料
| 型号： | MGFC47A7785 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-53, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 127K |
| 代理商： | MGFC47A7785 |
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC47A7785
7.7 – 8.5 GHz BAND / 47W
DESCRIPTION
The MGFC47A7785 is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 – 8.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz
High power gain
GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz
High power added efficiency
PAE=30% (TYP.) @f=7.7 – 8.5GHz
APPLICATION
Solid-state power amplifier for satellite earth-station
communication transmitter and VSAT
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=9.8A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain breakdown voltage
-20
V
VGSO
Gate to source breakdown voltage
-10
V
IGR
Reverse gate current
-130
mA
IGF
Forward gate current
168
mA
PT *1
Total power dissipation
168
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=168mA
-1
-
-4
V
P1dB
Output power at 1dB gain compression
45.7
46.7
-
dBm
GLP
Linear Power Gain
4.7
5.7
-
dB
ID
Drain current
-
11
-
A
PAE
Power added efficiency
IDS=10V,ID(RF off)=9.8A
f=7.7 – 8.5GHz
-
30
-
%
IM3*2
3rd order IM distortion
-39
-42
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
0.8
0.9
C/W
*2 : Item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz
*3 : Channel-case
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
20 .4 +/-0.2
16.7
(3)
24+/-0.3
OUTLINE DRAWING
Un it : m illime te rs
2
M
IN
.
GF-53
0
.1
+
/-
0
.0
5
2
.3
+
/-
0
.2
1
7
.4
+
/-
0
.2
2
.4
8
.0
+
/-
0
.2
2
M
IN
.
1
.3
(1) : Gate
(2) : Sou rc e
(3) : Dra in
4
.7
m
a
x.
0.7 +/-0.15
1
5
.8
(2 )
(1)
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