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参数资料
| 型号： | MGFS48B2122 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-47, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 332K |
| 代理商： | MGFS48B2122 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48B2122
2.11 - 2.17 GHz BAND 60W GaAs FET
DESCRIPTION
OUTLINE
The MGFS48B2122 is a 60W push-pull type GaAs Power FET
especially designed for use in 2.11 - 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
High output power
Pout = 60W (TYP.) @ f=2.17 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.17GHz
High power added efficiency
P.A.E. = 48 % (TYP.) @ f=2.17GHz
APPLICATION
2.11-2.17GHz band power amplifier for W-CDMA Base Station
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 12 (V)
ID = 2.0 (A)
RG=20 (ohm) for each gate
ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-20
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-10
V
with them.Trouble with semiconductors may lead to personal
PT *1
Total power dissipation
125
W
injury, fire or property damage. Remember to give due
Tch
Channel temperature
175
deg.C
consideration to safety when making your circuit designs,
Tstg
Storage temperature
-65 / +175
deg.C
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
*1 : Tc=25deg.C
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS (Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
GLP
Linear power gain
Pin=22dBm
11
12
-
dB
Pout
Output power
VDS=12V, ID(RF off)=2.0A
47
48
-
dBm
ID(RF)
Drain current
Pin=39dBm
f=2.17GHz
-
11
15
A
P.A.E.
Power added efficiency
-
48
-
%
Rth (ch-c)
Thermal resistance
Channel to Case
-
1
1.2
deg.C/W
June-'04
MITSUBISHI
ELECTRIC
3.6}0.4
unit : mm
1.9
3.2}0.8
17.4}0.3
3.2}0.8
8.0}0.2
3
1
2.0}0.15
0.1
3
2
1
24.0}0.3
16.2
drain
source
gate
2.4}0.2
2
3
6.0
2.0}0.15
1
20.4}0.2
GF-47
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFS48B2122_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.11-2.17 GHz BAND / 60W |
| MGFS48V2527 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5 - 2.7GHz BAND 60W GaAs FET |
| MGFS48V2527_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5 - 2.7GHz BAND 60W GaAs FET |
| MGFS52B2122 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.1 = 2.2 GHz BAND 100W GsAs FET |
| MGFS52BN2122A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.1-2.2 GHz BAND 160W GaAs FET |
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