
MGP4N60ED
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
—
870
—
Vdc
mV/
°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
—
10
200
Adc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
—
50
mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 1.5 Adc)
(VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 3.0 Adc)
VCE(on)
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°C
Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc)
gfe
—
1.8
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Cies
—
342
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
—
40
—
Transfer Capacitance
f = 1.0 MHz)
Cres
—
3.0
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
td(on)
—
34
—
ns
Rise Time
tr
—
30
—
Turn–Off Delay Time
(VCC = 360 Vdc, IC = 3.0 Adc,
V
15 Vd
L
300 H
td(off)
—
36
—
Fall Time
( CC
, C
,
VGE = 15 Vdc, L = 300 mH,
RG = 20 )
tf
—
216
—
Turn–Off Switching Loss
RG = 20 )
Energy losses include “tail”
Eoff
—
100
150
mJ
Turn–On Switching Loss
Eon
—
25
—
Total Switching Loss
Ets
—
125
—
Turn–On Delay Time
td(on)
—
33
—
ns
Rise Time
tr
—
32
—
Turn–Off Delay Time
(VCC = 360 Vdc, IC = 3.0 Adc,
V
15 Vd
L
300 H
td(off)
—
56
—
Fall Time
( CC
, C
,
VGE = 15 Vdc, L = 300 mH,
RG = 20 , TJ = 125°C)
tf
—
340
—
Turn–Off Switching Loss
RG = 20 , TJ = 125°C)
Energy losses include “tail”
Eoff
—
170
—
mJ
Turn–On Switching Loss
Eon
—
50
—
Total Switching Loss
Ets
—
220
—
Gate Charge
(V
360 Vd
I
30Ad
QT
—
18.1
—
nC
(VCC = 360 Vdc, IC = 3.0 Adc,
VGE = 15 Vdc)
Q1
—
3.8
—
VGE = 15 Vdc)
Q2
—
7.8
—
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.