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参数资料
| 型号： | MGP7N60ED |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 4/6页 |
| 文件大小： | 120K |
| 代理商： | MGP7N60ED |
MGP7N60ED
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
45
5
RG, GATE RESISTANCE (OHMS)
0.50
0.45
0.40
TJ, JUNCTION TEMPERATURE (°C)
150
0.2
0
,T
OT
AL
ENERGY
LOSSES
(mJ)
0.20
15
25
025
0.4
35
50
75
100
125
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 5.0 A
3.75 A
2.5 A
VCC = 360 V
VGE = 15 V
RG = 20 W
IC = 5.0 A
0.25
E TS
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
78
0
IC, COLLECTOR CURRENT (AMPS)
0.4
0
2
0.6
0.2
TJ = 125°C
VDD = 360 V
VGE = 15 V
RG = 20 W
45
,T
OT
AL
ENERGY
LOSSES
(mJ)
E TS
,T
OT
AL
ENERGY
LOSSES
(mJ)
E TS
0.15
0.55
0.60
0.6
0.3
0.1
0.5
0.1
0.7
0.3
0.8
10
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
1200
800
600
400
200
0
Qg, TOTAL GATE CHARGE (nC)
530
0
20
16
12
4
0
5
C,
CAP
ACIT
ANCE
(pF)
15
25
20
1000
10
15
35
20
25
8
V
,GA
TE-T
O-EMITTER
VOL
TAGE
(VOL
TS)
GE
TJ = 25°C
IC = 5.0 A
Q1
Q2
QT
VGE = 0 V
TJ = 25°C
Cies
Coes
Cres
50
10
GATE RESISTANCE (OHMS)
0.4
0.5
0.3
0.1
0
25
15
20
30
35
40
45
0.2
VCC = 360 V
VGE = 15 V
TJ = 125°C
IC = 5.0 A
3.75 A
2.5 A
,TURN-OFF
ENERGY
LOSSES
(mJ)
E of
f
0.30
0.35
3.75 A
2.5 A
13
6
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