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参数资料
| 型号： | MGSF3442VT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 20 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TSOP-6 |
| 文件页数： | 4/8页 |
| 文件大小： | 170K |
| 代理商： | MGSF3442VT1 |
MGSF3442VT1
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. SourceDrain Diode Forward Voltage
Figure 8. OnResistance versus
GatetoSource Voltage
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, JunctiontoAmbient
0.75
0
VSD, SOURCETODRAIN VOLTAGE (V)
20
10
VGS, GATETOSOURCE VOLTAGE (V)
0
0.08
0.04
0
50
TJ, TEMPERATURE (°C)
0.2
0.1
0
0.3
TIME (sec)
0.1
0.01
20
16
12
8.0
0
150
I S
,SOURCE
CURRENT
(A)
V
POWER
(W)
1.0
0.25
0.50
1.00
1.25
2.0
4.0
6.0
8.0
0.12
0.16
0.20
25
0
25
50
1.0
10
,V
ARIANCE
(V)
GS(th)
4.0
1.50
TJ = 150°C
TJ = 25°C
R
,ONRESIST
ANCE
(
)
W
DS(on)
ID = 4.0 A
0.4
75
100
125
ID = 250 mA
SQUARE WAVE PULSE DURATION (sec)
0.0001
0.01
0.1
1.0
10
30
0.1
0.01
2.0
1.0
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
IMPEDANCE
0.001
1. DUTY CYCLE, D = t1/t2
2. PER UNIT BASE =
2. RthJA = 62.5°C/W
3. TJM TA = PDMZthJA(t)
4. SURFACE MOUNTED
PDM
t1
t2
NOTES:
0.1
0.2
SINGLE PULSE
DUTY CYCLE = 0.5
0.02
0.05
0.1
0.2
相关PDF资料 |
PDF描述 |
|---|---|
| MGSF3442VT3 | 0.07 ohm, Si, POWER, FET |
| MGSF3442XT3 | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MGSF3442XT1 | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MGSF3442XT3 | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MGSF3455VT3 | 3.5 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGSF3442XT1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MGSF3454VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.2A 6-Pin TSOP T/R 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 30V, 4.2A, TSOP, Transistor Polarity:N Channel, Continuous Dra |
| MGSF3454XT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MGSF3455VT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MGSF3455XT1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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