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参数资料
| 型号： | MH8S72BALD-6 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| 中文描述： | 603979776位（8,388,608 - Word的72位）同步动态随机存储器 |
| 文件页数： | 7/56页 |
| 文件大小： | 732K |
| 代理商： | MH8S72BALD-6 |
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MITSUBISHI
ELECTRIC
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH8S72BAFD -7, -8
MITSUBISHI LSIs
BASIC FUNCTIONS
The MH8S72BAFD provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge
option,respectively.
To know the detailed definition of commands please see the command truth table.
Preliminary
Spec.
1/ Dec./1998
MIT-DS-0273-0.2
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
Read(READ) [/RAS =H,/CAS =L, /WE =H]
Write(WRITE) [/RAS =H, /CAS = /WE =L]
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
ACT command activates a row in an idle bank indicated by BA.
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,
READA
).
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank is
deactivated after the burst write(auto-precharge,
WRITEA
).
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks are
deactivated(precharge all,
PREA
).
PEFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
7
相关PDF资料 |
PDF描述 |
|---|---|
| MH8S72BALD-7 | 603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
| MH8S72BALD-8 | 603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
| MH8S72BBFD-7 | 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH8S72BBFD-8 | 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH8S72BCFD-6 | 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MH8S72BALD-7 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
| MH8S72BALD-8 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
| MH8S72BBFD-7 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH8S72BBFD-8 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH8S72BCFD-6 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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