参数资料
型号: MHVIC915
厂商: Motorola, Inc.
英文描述: 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
中文描述: 746-960兆赫射频LDMOS宽带集成功率放大器
文件页数: 1/12页
文件大小: 652K
代理商: MHVIC915
1
MHVIC915R2
Motorola, Inc. 2003
The RF Line
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The MHVIC915R2 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26
to 28 Volts) LDMOS IC technology and integrates a multi–stage structure.
Its wideband On–Chip integral matching circuitry makes it usable from 746
to 960 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, and CDMA. The device is
packaged in a PFP–16 flat pack package that provides excellent thermal
performance through a solderable backside contact.
Typical CDMA Performance: 869–894 MHz, 27 Volts, I
DQ1
= 80 mA, I
DQ2
=
120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Driver Application
Output Power — 23 dBm
Power Gain — 31 dB
Adjacent Channel Power Ratio —
–60 dBc @ 750 kHz in a 30 kHz BW
–66 dBc @ 1.98 MHz in a 30 kHz BW
Output Application
Output Power — 34 dBm
PAE = 21%
Adjacent Channel Power Ratio —
–50 dBc @ 750 kHz in a 30 kHz BW
Typical GSM Performance: 921–960 MHz, 26 Volts
Output Power — 15 W P1dB
Power Gain — 30 dB @ P1dB
Drain Efficiency = 56% @ P1dB
On–Chip Matching (50 Ohm Input, >9 Ohm Output)
On–Chip Current Mirror g
m
Sensing FET for Self Bias Application
Integrated Temperature Compensation Capability
Usable for SCPA and MCPA Architecture
Integrated ESD Protection
Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch
Reel.
PIN CONNECTIONS
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Order this document
by MHVIC915R2/D
$
SEMICONDUCTOR TECHNICAL DATA
%&'()
CASE 978–03
PFP–16
PLASTIC
CDMA, GSM/GSM EDGE
746–960 MHz, 15 W, 27 V
RF LDMOS WIDEBAND
INTEGRATED AMPLIFIER
REV 3
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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.
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