1
MHW5222A
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for broadband applications requiring low distortion characteristics.
Specifically intended for CATV market requirements. Features ion–implanted
arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system.
Broadband Power Gain
@ f = 40–450 MHz
Gp= 22 dB (Typ)
Broadband Noise Figure
@ f = 40–450 MHz
NF = 4.5 dB (Typ)
Superior Gain, Return Loss and DC Current Stability with Temperature
All Gold Metallization
7.0 GHz Ion–Implanted Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
VCC
TC
Tstg
+70
dBmV
DC Supply Voltage
+28
Vdc
Operating Case Temperature Range
–20 to +100
°
C
Storage Temperature Range
–40 to +100
°
C
ELECTRICAL CHARACTERISTICS
(VCC = 24 Vdc, TC = +30
°
C, 75
system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
40
—
450
MHz
Power Gain — 50 MHz
Gp
Gp
S
21.4
22
22.6
dB
Power Gain — 450 MHz
22.0
22.9
23.5
dB
Slope
0.2
0.5
1.5
dB
Gain Flatness (Peak To Valley)
—
—
0.2
0.4
dB
Return Loss — Input/Output
(Zo = 75 Ohms)
40–450 MHz
IRL/ORL
18
—
—
dB
Second Order Intermodulation Distortion
(Vout = +46 dBmV, Ch 2, M6, M15)
(Vout = +44 dBmV, Ch 2, M13, M22)
IMD
—
—
–80
–78
—
–72
dB
Cross Modulation Distortion
(Vout = +46 dBmV)
53–Channel FLAT
60–Channel FLAT
XMD53
XMD60
—
–60
–60
—
–59
dB
Composite Triple Beat
(Vout = +46 dBmV)
53–Channel FLAT
60–Channel FLAT
CTB53
CTB60
—
—
–63
–61
—
–60
dB
DIN (European Applications Only)
300 MHz — (CH V + Q – P @ W)
400 MHz — (CH M8 + M15 – M9 @ M14)
450 MHz — (CH M20 + M23 – M22 @ M21)
DIN1
DIN2
DIN3
—
—
—
125.5
125
124
—
—
—
dB
μ
V
Noise Figure
(f = 450 MHz)
NF
—
4.5
5.0
dB
DC Current
IDC
—
210
240
mA
Order this document
by MHW5222A/D
SEMICONDUCTOR TECHNICAL DATA
22 dB GAIN
450 MHz
60–CHANNEL
CATV TRUNK AMPLIFIER
CASE 714–06, STYLE 1