参数资料
型号: MHW903
厂商: MOTOROLA INC
元件分类: 衰减器
英文描述: 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
中文描述: 890 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
文件页数: 5/8页
文件大小: 154K
代理商: MHW903
5
MHW903 MHW953 MHW954
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
NOMINAL OPERATION
All electrical specifications are based on the nominal
conditions of Vs1 = Vs2 = Vs3 = 7.2 Vdc (Pins 2, 4, 5) and Vb
= 5.0 Vdc (Pin 3) for MHW903/953. Nominal conditions are
Vs1 = Vs2 = 7.2 Vdc (Pins 2 and 4) and Vb = 4.5 Vdc (Pin 3) for
MHW954. With these conditions, maximum current density on
any device is 1.5 x 105 A/cm2 and maximum die temperature
is 165
°
C. While the modules are designed to have excess gain
margin with ruggedness, operation of these units outside the
published specifications is not recommended unless prior
communications regarding intended use have been made
with the factory representative.
GAIN CONTROL
The module output power should be limited to specified
value. The preferred method of power control for the
MHW903/953 is to fix Vs1 = Vs2 = Vs3 = 7.2 Vdc, Vb = 5.0 Vdc,
Pin (Pin 1) at 1.0 mW, and vary Vcont (Pin 1) voltage. For the
MHW954, fix Vs1 = Vs2 = 7.2 Vdc and Vb = 4.5 Vdc; then vary
Pin (Pin 1) to control Pout (Pin 5).
DECOUPLING
Due to the high gain of the four stages and the module size
limitation, external decoupling networks require careful con-
sideration, Pins 2, 3, 4 and 5 are internally bypassed with a
0.018
μ
F chip capacitor which is effective for frequencies from
5.0 MHz through 940 MHz. For bypassing frequencies below
5.0 MHz, networks equivalent to that shown in Figure 1 are
recommended. Inadequate decoupling will result in spurious
outputs at certain operating frequencies and certain phase
angles of input and output VSWR.
MOUNTING CONSIDERATIONS
For the MHW903 Series module, mounting is generally
accomplished by soldering the flange to a suitable heat sink.
This can be done with a low temperature solder such as 52%
In, 48% Sn and type “R” Flux which liquifies below 150
°
C.
Under
no circumstances should the MHW903 Series modules
be heated to a temperature greater than
165
°
C. Internal
construction of the module has been achieved using 36% Tin,
62% lead, 2% silver solder which liquifies at 179–180
°
C.
The modules are NOT hermetic. Do not immerse a module
in a flux cleaning solution or other liquids under any
circumstances.
LOAD MISMATCH
During final test each module is load mismatch tested in a
fixture having the identical decoupling networks described in
Figure 1. Electrical conditions are Vs1 = Vs2 = Vs3 = 9.0 Vdc
(Pins 2, 4, 5), and Vb = 5.0 Vdc (Pin 3), Pin = 2.0 mW (12.5%
duty cycle, 4.6 ms period), VSWR equal to 10:1, and output
power equal to 4.5 watts.
相关PDF资料
PDF描述
MHW954 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
MJ13080 NPN SILICON POWER TRANSISTORS
MJ13081 NPN SILICON POWER TRANSISTORS
MJ14001 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS
MJ14001 COMPLEMENTARY SILICON POWER TRANSITORS
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