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参数资料
| 型号： | MI1A3 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | COMPACT PACKAGE-2 |
| 文件页数： | 3/3页 |
| 文件大小： | 85K |
| 代理商： | MI1A3 |
92
10
20
50
40
30
0
1
5
50
10
20ms
FMB-29
FMB-2306
FMB-29L
50
10
1
0.1
0.01
0
20
40
100
80
60
50
10
1
0.1
0.001
0.01
10
20
30
40
60
50
0
1
5
50
10
20ms
50
10
1
0.1
0.01
0
0.5
1.0
1.5
0
0.5
1.0
1.5
10
1
0.1
0.01
0.001
0
20
40
100
80
60
Ta 125
°C
=
60
°C
100
°C
26
°C
25
°C
100
°C
Ta 125
°C
=
60
°C
Ta 125
°C
=
60
°C
100
°C
26
°C
100
°C
Ta 125
°C
=
60
°C
25
°C
VR=90V
0
60
70
120
130
2
4
6
8
90
80
100
110
t / T 1/ 3
=
t / T 1/2
=
D.C.
t / T 1/6
=
Sinewave
t / T 1/ 3
=
t / T 1/2
=
D.C.
t / T 1/6
=
Sinewave
0
80
110
130
1
2
3
4
120
90
100
Ta=150
°C
125
°C
100
°C
60
°C
25
°C
0
0.4
0.6
0.2
0.8
1.2
1.0
1.4
0.001
1
0.1
0.01
10
100
0
5
10
15
20
25
30
0
10
20
30
40
=
t / T 1/6
t / T 1/ 3, Sinewave
=
t / T 1/2
=
D.C.
T
t
Tj =150C
0
50
100
150
0
10
20
VR =60V
30
T
t
Tj =150C
=
t / T 1/3
Sinewave
t / T 1/2
=
D.C.
Ta =150
°C
125
°C
100
°C
60
°C
25
°C
020
30
10
50
40
60
0.001
1
0.1
0.01
10
100
FME-24H
FME-2104
100
110
120
130
140
150
0
6
4
2
8
10
t / T 5/6
=
t / T 1/2
=
D.C.
t / T 1/ 3
=
Sinewave
t
T
VR=40V
Tj=150
°C
50
20
40
80
60
0
1
5
10
20ms
20
40
100
80
60
0
1
5
50
10
20ms
100
110
120
130
140
150
0
5
10
15
t / T 5/6
=
t / T 1/2
=
D.C.
t / T 1/ 3
=
Sinewave
t
T
VR=40V
Tj
=150
°C
IFSM
(A)
IFSM
(A)
IFSM
(A)
IFSM
(A)
Tc— IF (AV) Derating
Case Temperature Tc
(
°C)
Average
Forward
Current
I
F
(AV)
(A)
Reverse Voltage
VR (V)
Reverse
Current
I
R
(mA)
VR—IR Characteristics (Typical)
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
Overcurrent Cycles
Peak
For
ward
Surge
Current
I
FSM
(A)
IFMS Rating
Tc— IF (AV) Derating
Case Temperature Tc
(
°C)
Average
Forward
Current
I
F
(AV)
(A)
Reverse Voltage
VR (V)
Reverse
Current
I
R
(mA)
VR—IR Characteristics (Typical)
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
Overcurrent Cycles
Peak
For
ward
Surge
Current
I
FSM
(A)
IFMS Rating
Tc— IF (AV) Derating
Case Temperature Tc
(
°C)
Average
Forward
Current
I
F
(AV)
(A)
Reverse Voltage
VR (V)
Reverse
Current
I
R
(mA)
VR—IR Characteristics (Typical)
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
Average Forward Current IF(AV) (A)
Forward
Power
Loss
P
F
(W)
IF(AV)—PF Characteristics
Average
Forward
Current
I
F
(AV)
(A)
Overcurrent Cycles
Peak
For
ward
Surge
Current
I
FSM
(A)
IFMS Rating
T — IF(AV) Characteristics
Lead Temperature T (
°C)
Average
Forward
Current
I
F
(AV)
(A)
Overcurrent Cycles
Peak
For
ward
Surge
Current
I
FSM
(A)
IFMS Rating
T — IF(AV) Characteristics
Lead Temperature T (
°C)
Characteristic Curves
Schottky Barrier Diodes
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