参数资料
| 型号： | MIC2159YMME |
| 厂商： | Micrel Inc |
| 文件页数： | 8/16页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 10-MSOP |
| 标准包装： | 100 |
| 系列： | SYNCHRONOUS-itty™ |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 450kHz |
| 占空比： | 92% |
| 电源电压： | 3 V ~ 14.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 包装： | 管件 |
| 产品目录页面： | 1092 (CN2011-ZH PDF) |
| 其它名称： | 576-1588 |
Micrel, Inc.
MOSFET Gate Drive
The MIC2159 high-side drive circuit is designed to
switch an N-Channel MOSFET. The Functional Block
Diagram shows a bootstrap circuit, consisting of D1 and
C BST . This circuit supplies energy to the high-side drive
circuit. Capacitor C BST circuit is charged while the low-
side MOSFET is on and the voltage on the VSW pin is
approximately 0V. When the high-side MOSFET driver is
turned on, energy from C BST is used to turn the MOSFET
on. As the MOSFET turns on, the voltage on the VSW
pin increases to approximately VIN. Diode D1 is
reversed biased and C BST floats high while continuing to
keep the high-side MOSFET on. When the low-side
switch is turned back on, C BST is recharged through D1.
MIC2159
The drive voltage is derived from the internal 5V V DD
bias supply. The nominal low-side gate drive voltage is
5V and the nominal high-side gate drive voltage is
approximately 4.5V due the voltage drop across D1. An
approximate 50ns delay between the low-side(off) to
high-side(on) driver transitions is used to prevent current
from simultaneously flowing unimpeded through both
MOSFETs (shoot-through). Adaptive gate drive is
implemented on the high-side(off) to low-side(on) driver
transition to reduce losses in the flywheel diode and to
prevent shoot-through. This is operated by detecting the
VSW pin; once this pin is detected to reach 1.5v, the
high-side MOSFET can be assumed to be off and the
low side driver is enabled.
March 2009
8
M9999-030509-B
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