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参数资料
| 型号： | MIC2589-2YM |
| 厂商： | Micrel Inc |
| 文件页数： | 22/29页 |
| 文件大小： | 4205K |
| 描述： | IC CTRLR HOT SWAP NEG HV 14-SOIC |
| 标准包装： | 54 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电源电压： | -19 V ~ -80 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 管件 |
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Micrel
MIC2589/MIC2595
December 2005
22
M9999-120505
(408) 955-1690
A 0.5W sense resistor is a good choice in this
application.
Power MOSFET Selection
Selecting the proper external MOSFET for use with
theMIC2589/MIC2595 involves three straightforward
tasks:
" Choice of a MOSFET that meets minimum voltage
requirements.
" Selection of a device to handle the maximum
continuous current (steady-state thermal issues).
" Verify the selected parts ability to withstand any
peak currents (transient thermal issues).
Power MOSFET Operating Voltage Requirements
The first voltage requirement for the MOSFET is that
the drain-source breakdown voltage of the MOSFET
must be greater than V
IN(MAX)
= V
DD
V
EE
(min).
The second breakdown voltage criterion that must be
met is the gate-source voltage. For the
MIC2589/MIC2595, the gate of the external MOSFET
is driven up to a maximum of 11V above VEE. This
means that the external MOSFET must be chosen to
have a gate-source breakdown voltage of 12V or
more; 20V is recommended. Most power MOSFETs
with a 20V gate-source voltage rating have a 30V
drain-source breakdown rating or higher. For many
48V telecom applications, transient voltage spikes can
approach, and sometimes exceed, 100V. The
absolute maximum input voltage rating of the
MIC2589/MIC2595 is 100V; therefore, a drain-source
breakdown voltage of 100V is suggested for the
external MOSFET. Additionally, an external input
voltage clamp is strongly recommended for
applications that do not utilize conditioned power
supplies.
Power MOSFET Steady-State Thermal Issues
The selection of a MOSFET to meet the maximum
continuous current is a fairly straightforward exercise.
First, arm yourself with the following data:
" The value of I
LOAD(CONT, MAX.)
for the output in
question (see Sense Resistor Selection).
" The manufacturers datasheet for the candidate
MOSFET.
" The maximum ambient temperature in which the
device will be required to operate.
" Any knowledge you can get about the heat sinking
available to the device (e.g., can heat be dissipated
into the ground plane or power plane, if using a
surface-mount part? Is any airflow available?).
The datasheet will almost always give a value of ON
resistance for a given MOSFET at a gate-source
voltage of 4.5V and 10V. For MIC2589/MIC2595
applications, choose the gate-source ON resistance at
10V and call this value R
ON
. Since a heavily enhanced
MOSFET acts as an ohmic (resistive) device, almost
all thats required to determine steady-state power
dissipation is to calculate I
2
R. The one addendum to
this is that MOSFETs have a slight increase in R
ON
with increasing die temperature. A good
approximation for this value is 0.5% increase in R
ON
per 癈 rise in junction temperature above the point at
which R
ON
was initially specified by the manufacturer.
For instance, if the selected MOSFET has a
calculated R
ON
of 10m& at T
J
= 25癈, and the actual
junction temperature ends up at 110癈, a good first
cut at the operating value for R
ON
would be:
R
ON
H 10m&[1 + (110 25)(0.005)] H14.3m&
The final step is to make sure that the heat sinking
available to the MOSFET is capable of dissipating at
least as much power (rated in 癈/W) as that with
which the MOSFETs performance was specified by
the manufacturer. Here are a few practical tips:
1. The heat from a TO-263 power MOSFET
flows almost entirely out of the drain tab. If
the drain tab can be soldered down to one
square inch or more, the copper will act as
the heat sink for the part. This copper must
be on the same layer of the board as the
MOSFET drain.
2. Airflow works. Even a few LFM (linear feet
per minute) of air will cool a MOSFET down
substantially. If you can, position the
MOSFET(s) near the inlet of a power
supplys fan, or the outlet of a processors
cooling fan.
3. The best test of a candidate MOSFET for
an application (assuming the above tips
show it to be a likely fit) is an empirical one.
Check the MOSFETs temperature in the
actual layout of the expected final circuit, at
full operating current. The use of a
thermocouple on the drain leads, or infrared
pyrometer on the package, will then give a
reasonable idea of the devices junction
temperature.
Power MOSFET Transient Thermal Issues
If the prospective MOSFET has been shown to
withstand the environmental voltage stresses and the
worst-case steady-state power dissipation is
addressed, the remaining task is to verify if the
MOSFET is capable of handling extreme overcurrent
load faults, such as a short circuit, without
overheating. A power MOSFET can handle a much
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC2589-2YM TR | 功能描述:热插拔功率分布 Negative Voltage Hot-swap Controller - Lead Free RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| MIC2589-2YM-TR | 功能描述:Hot Swap Controller, Sequencer 1 Channel -48V 14-SOIC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:过期 类型:热交换控制器，序列发生器 通道数:1 内部开关:无 应用:-48V 特性:闭锁故障 可编程特性:限流，故障超时，OVP，UVLO 电压 - 电源:-80 V ~ -19 V 电流 - 输出（最大值）:- 工作温度:-40°C ~ 85°C 电流 - 电源:4mA 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商器件封装:14-SOIC 功能引脚:CFILTER，CNLD，DRAIN，PGTIMER，OV，/PWRGD1，/PWRGD2，/PWRGD3，UV 标准包装:1 |
| MIC2589R-1BM | 功能描述:IC CTRLR HOT SWAP NEG HV 14-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| MIC2589R-1BM TR | 功能描述:IC CTRLR HOT SWAP NEG HV 14-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| MIC2589R-1YM | 功能描述:热插拔功率分布 Negative Voltage Hot-swap Controller - Lead Free RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
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