参数资料
型号: MIC4104YM TR
厂商: Micrel Inc
文件页数: 12/18页
文件大小: 0K
描述: IC DRIVER MOSFET 100V TTL 8-SOIC
标准包装: 2,500
配置: 半桥
输入类型: 非反相
延迟时间: 24ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 118V
电源电压: 9 V ~ 16 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
其它名称: MIC4104YMTR
MIC4104YMTR-ND
Micrel
The value of V F should be taken at the peak current
through the diode, however, this current is difficult to
calculate because of differences in source impedances.
The peak current can either be measured or the value of
V F at the average current can be used and will yield a good
approximation of diode power dissipation.
The reverse leakage current of the internal bootstrap diode
is typically 11μA at a reverse voltage of 100V and 125°C.
Power dissipation due to reverse leakage is typically much
less than 1mW and can be ignored.
Reverse recovery time is the time required for the injected
minority carriers to be swept away from the depletion
region during turn-off of the diode. Power dissipation due
to reverse recovery can be calculated by computing the
average reverse current due to reverse recovery charge
times the reverse voltage across the diode.
MIC4103/4104
November 2010
12
M9999-110910-B
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