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| 型号： | MIC4124YME |
| 厂商： | Micrel Inc |
| 文件页数： | 9/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR DUAL NONINV 8SOIC |
| 标准包装： | 95 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 44ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1448 |
MIC4123/4124/4125
P Q = V S x [D x I H + (1 – D) x I L ]
= 12 x [(0.5 x 0.0035) + (0.5 x 0.0003)]
= 0.0228W
Total power dissipation, then, is:
P D = 0.2160 + 0.0066 + 0.0228
= 0.2454W
Assuming an E-Pad SOIC package, with an θ JA of 58°C/W,
this will result in the junction running at:
0.2454 x 58 = 14.2°C
above ambient, which, given a maximum ambient tempera-
ture of 60°C, will result in a maximum junction temperature
of 89.4°C.
EXAMPLE 2: A MIC4124 operating on a 15V input, with one
driver driving a 50Ω resistive load at 1MHz, with a duty cycle
of 67%, and the other driver quiescent, in a maximum ambi-
ent temperature of 40°C:
P L = I 2 x R O x D
First, I O must be determined.
I O = V S / (R O + R LOAD )
Given R O from the characteristic curves then,
I O = 15 / (3.3 + 50)
I O = 0.281A
and:
P L = (0.281) 2 x 3.3 x 0.67
= 0.174W
P T = F x V S x (A?s)/2
(because only one side is operating)
= (1,000,000 x 15 x 3.3 x 10 –9 ) / 2
= 0.025 W
and:
P Q = 15 x [(0.67 x 0.00125) + (0.33 x 0.000125) +
(1 x 0.000125)]
(this assumes that the unused side of the driver has its input
grounded, which is more ef?cient)
= 0.015W
then:
P D = 0.174 + 0.025 + 0.0150
= 0.213W
Micrel, Inc.
In a MLF with an θ JA of 60°C/W, this amount of power results
in a junction temperature given the maximum 40°C ambient
of:
(0.213 x 100) + 40 = 52.8°C
The actual junction temperature will be lower than calculated
both because duty cycle is less than 100% and because the
graph lists R DS(on) at a T J of 125°C and the R DS(on) at 52.8°C T J
will be somewhat lower.
De?nitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz.
I H = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I L = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the driver ’s
load
in Watts.
P Q = Power dissipated in a quiescent driver in Watts.
P T = Power dissipated in a driver when the output
changes
states ( “shoot-through current ”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in the graph on the following page in ampere-
nanoseconds. This ?gure must be multiplied by the
number of repetitions per second (frequency to ?nd
Watts).
R O = Output resistance of a driver in Ohms.
V S = Power supply voltage to the IC in Volts.
M9999-052405
9
May 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4124YME TR | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Non-Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4124YML | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4124YML TR | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Non-Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4125 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 3A-Peak Low-Side MOSFET Driver |
| MIC4125YME | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Inverting/Non-Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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