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参数资料
| 型号： | MIC4224YMME TR |
| 厂商： | Micrel Inc |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR DUAL-NON 4A 8MSOP |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 带卷 (TR) |
Micrel, Inc.
Absolute Maximum Ratings (1)
Supply Voltage (V DD )....................................................+20V
Input Voltage (V INA , V INB ) ................ V DD + 0.3V to GND - 5V
Enable Voltage (V ENA , V ENB )…..…….... ...0.3V to V DD + 0.3V
Junction Temperature (T J ) .........................-55°C to +150°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature (10 sec.)....................................... 300°C
ESD Rating................................. HBM = 2kV, MM = 200V (3)
MIC4223/MIC4224/MIC4225
Operating Ratings (2)
Supply Voltage (V DD )..................................... +4.5V to +18V
Junction Temperature (T J ) ........................ –40°C to +125°C
Package Thermal Resistance
EPAD MSOP ( θ JA ) .............................................60°C/W
SOIC ( θ JA ) ........................................................120°C/W
Electrical Characteristics
4.5V ≤ V DD ≤ 18V; C L = 2000pF. T A = 25°C, bold values indicate full operating junction temperature range, unless noted.
Symbol
Parameter
Condition
Min
Typ
Max
Units
Input
V IH
Logic 1 Input Voltage
2.4
2.2
V
V IL
Hysteresis
Logic 0 Input Voltage
1.95
0.25
0.8
V
V
I IN
Input Current
0 ≤ V IN ≤ V DD
–1
1
μA
Output
V IN = -5V
–10
-40
10
μA
mA
V OH
V OL
High Output Voltage
Low Output Voltage
I OUT = -10mA, V DD = 18V
I OUT = 10mA, V DD = 18V
V DD - 0.45
0.30
V
V
RO
IPK
Output Resistance – Source
Output Resistance – Sink
Peak Output Current
I OUT = -10mA, V DD = 18V
I OUT = 10mA, V DD = 18V
V DD = 8V
30
16
±3
45
30
?
A
V DD = 12V
±4
I
Latch-Up Protection
Withstand reverse current
>500
mA
Switching Time
t R
t F
t D1
t D2
Rise Time
Fall Time
Delay Time
Delay Time
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
15
15
25
35
40
40
45
50
ns
ns
ns
ns
Enable (ENA, ENB)
V EN_H
High Level Enable Voltage
LO to HI transition
2.4
1.9
V
V EN_L
Low Level Enable Voltage
HI to LO transition
1.55
0.8
V
Hysteresis
0.35
V
R EN
Enable Impedance
V DD = 18V, V ENA = V ENB = GND
100
k ?
t D3
t D4
Propagation Delay Time
Propagation Delay Time
C L = 2000pF
C L = 2000pF
20
45
60
150
ns
ns
Power Supply
I SH
I SL
Power Supply Current
Power Supply Current
V INA = V INB = 3.0V, V ENA = V ENB = open
V INA = V INB = 0.0V, V ENA = V ENB = open
1.7
0.7
2.5
1.5
mA
mA
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating rating.
3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5k ? in series with 100pF.
June 2009
3
M9999-061109-A
(408) 944-0800
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| MIC4225YMME TR | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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