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参数资料
| 型号： | MIC4421ABM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 9A LS 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC4421ABMTR MIC4421ABMTR-ND |
Micrel, Inc.
Input Stage
The input voltage level of the MIC4421A changes the
V IN +18V
MIC4421A/4422A
quiescent supply current. The N-Channel MOSFET input
stage transistor drives a 320μA current source load. With
a logic “1” input, the quiescent supply current is typically
500μA. Logic “0” input level signals reduce quiescent
current to 80μA typical.
+ 5.0V
1
8
6, 7
WIMA
MKS-2
1μF
TEK Current
Probe 6302
+18V
The MIC4421A/4422A input is designed to provide
600mV of hysteresis. This provides clean transitions,
reduces noise sensitivity, and minimizes output stage
0V
0.1μF
MIC4421A
4
5
0.1μF
0V
2500pF
Polycarbonate
current spiking when changing states. Input voltage
threshold level is approximately 1.5V, making the device
Logic
Ground
6 Amps
TTL compatible over the full temperature and operating
supply voltage ranges. Input current is less than ±10μA.
The MIC4421A can be directly driven by the TL494,
Power
Ground
300mV
PC Trace
SG1526/1527, SG1524, TSC170, MIC38C42, and
similar switch mode power supply integrated circuits. By
off loading the power-driving duties to the MIC4421A/
4422A, the power supply controller can operate at lower
dissipation. This can improve performance and reliability.
The input can be greater than the V S supply, however,
current will flow into the input lead. The input currents
can be as high as 30mA p-p (6.4mARMS) with the input.
No damage will occur to MIC4421A/4422A however, and
it will not latch.
The input appears as a 7pF capacitance and does not
change even if the input is driven from an AC source.
While the device will operate and no damage will occur
up to 25V below the negative rail, input current will
increase up to 1mA/V due to the clamping action of the
input, ESD diode, and 1k ? resistor.
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as 4000 and 74C have
outputs which can only supply a few milliamperes of
current, and even shorting outputs to ground will not
force enough current to destroy the device. The
MIC4421A/4422A on the other hand, can source or sink
several amperes and drive large capacitive loads at high
frequency. The package power dissipation limit can
easily be exceeded. Therefore, some attention should be
given to power dissipation when driving low impedance
loads and/or operating at high frequency.
Figure 7. Switching Time Due to Negative Feedback
The supply current vs. frequency and supply current vs.
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 1 lists the
maximum safe operating frequency for several power
supply voltages when driving a 10,000pF load. More
accurate power dissipation figures can be obtained by
summing the three dissipation sources.
Given the power dissipation in the device, and the
thermal resistance of the package, junction operating
temperature for any ambient is easy to calculate. For
example, the thermal resistance of the 8-pin plastic DIP
package, from the data sheet, is 84.6°C/W. In a 25°C
ambient, then, using a maximum junction temperature of
150°C, this package will dissipate 1478mW.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the
device:
? Load Power Dissipation (PL)
? Quiescent power dissipation (PQ)
? Transition power dissipation (PT)
Calculation of load power dissipation differs depending
on whether the load is capacitive, resistive or inductive.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated
as:
P L = I 2 R O D
where:
I = the current drawn by the load
R O = the output resistance of the driver when
the output is high, at the power supply
voltage used. (See data sheet)
D = fraction of time the load is conducting
(duty cycle).
June 2007
9
M9999-062707
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相关代理商/技术参数 |
参数描述 |
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| MIC4421ABN | 功能描述:IC DRIVER MOSFET 9A LS 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4421ACM | 功能描述:IC DRIVER MOSFET 9A LS 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4421ACM TR | 功能描述:IC DRIVER MOSFET 9A LS 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4421ACN | 功能描述:IC DRIVER MOSFET 9A LS 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4421ACT | 功能描述:IC DRIVER MOSFET 9A LS TO-220-5 RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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