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| 型号： | MIC4421AYM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 9A LS 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC4421AYMTR MIC4421AYMTR-ND |
Micrel, Inc.
Table 1. MIC4421A Maximum Operating Frequency
Quiescent Power Dissipation
MIC4421A/4422A
Conditions:
V S
18V
15V
10V
5V
Max Frequency
220kHz
300kHz
640kHz
2MHz
Quiescent power dissipation (PQ, as described in the
input section) depends on whether the input is high or
low. A low input will result in a maximum current drain
(per driver) of ≤ 0.2mA; a logic high will result in a current
drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
P Q = V S [D I H + (1 – D) I L ]
1.
2.
3.
θ JA = 150°C/W
T A = 25°C
C L = 10,000pF
where:
I H = Quiescent current with input high
I L = Quiescent current with input low
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the
energy placed in, or removed from, the load capacitance
by the driver. The energy stored in a capacitor is
described by the equation:
E = 1/2 C V 2
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations
the 1/2 is removed. This equation also shows that it is
good practice not to place more voltage in the capacitor
than is necessary, as dissipation increases as the
square of the voltage applied to the capacitor. For a
driver with a capacitive load:
D = Fraction of time input is high (duty cycle)
V S = Power supply voltage
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for
a very brief interval, both the N- and P-Channel
MOSFETs in the output totem-pole are ON
simultaneously, and a current is conducted through them
from V S to ground. The transition power dissipation is
approximately:
P T = 2 f V S (A?s)
where (A?s) is a time-current factor derived from the
where:
PL = f C (VS)2
f = Operating Frequency
C = Load Capacitance
typical characteristic curve “Crossover Energy vs.
Supply Voltage.”
Total power (P D ) then, as previously described is just:
P D = P L + P Q + P T
VS = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated.
For the part of the cycle in which the driver is actively
forcing current into the inductor, the situation is the same
as it is in the resistive case:
P L1 = I 2 R O D
However, in this instance the R O required may be either
the on-resistance of the driver when its output is in the
high state, or its on-resistance when the driver is in the
low state, depending on how the inductor is connected,
and this is still only half the story. For the part of the
cycle when the inductor is forcing current through the
driver, dissipation is best described as:
P L2 = I V D (1 – D)
where V D is the forward drop of the clamp diode in the
driver (generally around 0.7V). The two parts of the load
dissipation must be summed in to produce P L :
P L = P L1 + P L2
Definitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time
the input to the driver is high.
f = Operating Frequency of the driver in Hertz.
I H = Power supply current drawn by a driver
when both inputs are high and neither output
is loaded.
I L = Power supply current drawn by a driver
when both inputs are low and neither output
is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the
driver’s load in Watts.
P Q = Power dissipated in a quiescent driver in
Watts.
June 2007
10
M9999-062707
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4421AYN | 功能描述:功率驱动器IC High Speed, 9A Low-Side MOSFET Driver, New Die (Lead-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4421AZM | 功能描述:功率驱动器IC High Speed, 9A Low-Side MOSFET Driver, New Die (Lead-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4421AZM TR | 功能描述:功率驱动器IC High Speed, 9A Low-Side MOSFET Driver, New Die (Lead-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4421AZN | 功能描述:功率驱动器IC High Speed, 9A Low-Side MOSFET Driver, New Die (Lead-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4421AZT | 功能描述:功率驱动器IC High Speed, 9A Low-Side MOSFET Driver, New Die (Lead-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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