参数资料
型号: MIC4422BM TR
厂商: Micrel Inc
文件页数: 9/12页
文件大小: 0K
描述: IC DRIVER MOSFET 9A LOSIDE 8SOIC
标准包装: 2,500
配置: 低端
输入类型: 非反相
延迟时间: 15ns
电流 - 峰: 9A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
其它名称: 576-1522-2
MIC4422BM TR-ND
MIC4422BMTR
MIC4421/4422
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V 2
As this energy is lost in the driver each time the load is charged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice
not to place more voltage in the capacitor than is necessary,
as dissipation increases as the square of the voltage applied
to the capacitor. For a driver with a capacitive load:
P L = f C (V S ) 2
where:
f = Operating Frequency
C = Load Capacitance
V S = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
P L1 = I 2 R O D
However, in this instance the R O required may be either
the on resistance of the driver when its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the induc-
tor is forcing current through the driver, dissipation is best
described as
P L2 = I V D (1 – D)
where V D is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipation
must be summed in to produce P L
P L = P L1 + P L2
Quiescent Power Dissipation
Quiescent power dissipation (P Q , as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
P Q = V S [D I H + (1 – D) I L ]
where:
Micrel, Inc.
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from V S to ground. The transition
power dissipation is approximately:
P T = 2 f V S (A?s)
where (A?s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Volt-
age.”
Total power (P D ) then, as previously described is just
P D = P L + P Q + P T
De?nitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
I H = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I L = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the driver ’s
load in Watts.
P Q = Power dissipated in a quiescent driver in Watts.
P T = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
?gure must be multiplied by the number of repeti-
tions per second (frequency) to ?nd Watts.
R O = Output resistance of a driver in Ohms.
V S = Power supply voltage to the IC in Volts.
I H =
I L =
D =
V S =
quiescent current with input high
quiescent current with input low
fraction of time input is high (duty cycle)
power supply voltage
August 2005
9
M9999-081005
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