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| 型号： | MIC4422ZT |
| 厂商： | Micrel Inc |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 9A LS TO-220-5 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-5 |
| 供应商设备封装： | TO-220-5 |
| 包装： | 管件 |
| 产品目录页面： | 1110 (CN2011-ZH PDF) |
| 其它名称： | 576-2321 MIC4422ZT-ND |
MIC4421/4422
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V 2
As this energy is lost in the driver each time the load is charged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice
not to place more voltage in the capacitor than is necessary,
as dissipation increases as the square of the voltage applied
to the capacitor. For a driver with a capacitive load:
P L = f C (V S ) 2
where:
f = Operating Frequency
C = Load Capacitance
V S = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
P L1 = I 2 R O D
However, in this instance the R O required may be either
the on resistance of the driver when its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the induc-
tor is forcing current through the driver, dissipation is best
described as
P L2 = I V D (1 – D)
where V D is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipation
must be summed in to produce P L
P L = P L1 + P L2
Quiescent Power Dissipation
Quiescent power dissipation (P Q , as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
P Q = V S [D I H + (1 – D) I L ]
where:
Micrel, Inc.
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from V S to ground. The transition
power dissipation is approximately:
P T = 2 f V S (A?s)
where (A?s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Volt-
age.”
Total power (P D ) then, as previously described is just
P D = P L + P Q + P T
De?nitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
I H = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I L = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the driver ’s
load in Watts.
P Q = Power dissipated in a quiescent driver in Watts.
P T = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
?gure must be multiplied by the number of repeti-
tions per second (frequency) to ?nd Watts.
R O = Output resistance of a driver in Ohms.
V S = Power supply voltage to the IC in Volts.
I H =
I L =
D =
V S =
quiescent current with input high
quiescent current with input low
fraction of time input is high (duty cycle)
power supply voltage
August 2005
9
M9999-081005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4423 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4423_05 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 3A-Peak Low-Side MOSFET Driver |
| MIC4423_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4423BM | 功能描述:IC DRIVER MOSFET 3A DUAL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4423BM TR | 功能描述:IC DRIVER MOSFET 3A DUAL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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