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参数资料
| 型号： | MIC4425BN |
| 厂商： | Micrel Inc |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 3A DUAL 8DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 33ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
MIC4423/4424/4425
Absolute Maximum Ratings (Note 1)
Supply Voltage ........................................................... +22V
Input Voltage .................................. V S + 0.3V to GND – 5V
Junction Temperature ................................................150°C
Storage Temperature Range ...................... –65°C to 150°C
Lead Temperature (10 sec.) ......................................300°C
ESD Susceptability, Note 3 ..................................... 1000V
Micrel, Inc.
Operating Ratings (Note 2)
Supply Voltage (V S ) ......................................+4.5V to +18V
Temperature Range
C Version ....................................................0°C to +70°C
B Version ................................................–40°C to +85°C
Package Thermal Resistance
DIP θ JA ............................................................. 130°C/W
DIP θ JC ............................................................... 42°C/W
Wide-SOIC θ JA ................................................. 120°C/W
Wide-SOIC θ JC ................................................... 75°C/W
SOIC θ JA ........................................................... 120°C/W
SOIC θ JC ............................................................ 75°C/W
MIC4423/4424/4425 Electrical Characteristics (Note 5)
4.5V ≤ V S ≤ 18V; T A = 25°C, bold values indicate –40°C ≤ T A ≤ +85°C; unless noted.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Input
V IH
V IL
Logic 1 Input Voltage
Logic 0 Input Voltage
2.4
0.8
V
V
I IN
Input Current
0V ≤ V IN ≤ V S
–1
–10
1
10
μA
μA
Output
V OH
V OL
High Output Voltage
Low Output Voltage
V S –0.025
0.025
V
V
R O
I PK
I
Output Resistance HI State
Output Resistance LO State
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
I OUT = 10mA, V S = 18V
V IN = 0.8V, I OUT = 10mA, V S = 18V
I OUT = 10mA, V S = 18V
V IN = 2.4V, I OUT = 10mA, V S = 18V
>500
2.8
3.7
3.5
4.3
3
5
8
5
8
Ω
Ω
Ω
Ω
A
mA
Switching Time (Note 4)
t R
t F
t D1
t D2
t PW
Rise Time
Fall Time
Delay Tlme
Delay Time
Pulse Width
test Figure 1, C L = 1800pF
test Figure 1, C L = 1800pF
test F?gure 1, C L = 1800pF
test Figure 1, C L = 1800pF
test Figure 1
400
23
28
25
32
33
32
38
38
35
60
35
60
75
100
75
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
Power Supply
I S
I S
Power Supply Current
Power Supply Current
V IN = 3.0V (both inputs)
V IN = 0.0V (both inputs)
1.5
2
0.15
0.2
2.5
3.5
0.25
0.3
mA
mA
mA
mA
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Exceeding the absolute maximum rating may damage the device.
The device is not guaranteed to function outside its operating rating.
Devices are ESD sensitive. Handling precautions recommended. ESD tested to human body model, 1.5k in series with 100pF.
Switching times guaranteed by design.
Speci?cation for packaged product only.
July 2005
3
MIC4423/4424/4425
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