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参数资料
| 型号： | MIC4451BM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 12A HS 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 12A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC4451BMTR MIC4451BMTR-ND |
Micrel Inc.
+18
Resistive Load Power Dissipation
MIC4451/4452
WIMA
MKS-2
1 μF
Dissipation caused by a resistive load can be calculated
as:
5.0V
1
8
6, 7
TEK CURRENT
PROBE 6302
18 V
P L = I 2 R O D
MIC4451
0V
0.1μF
4
5
0.1μF
0V
2,500 pF
POLYCARBONATE
where:
I = the current drawn by the load
LOGIC
GROUND
12 AMPS
R O = the output resistance of the driver when the output
is high, at the power supply voltage used. (See data
POWER
GROUND
300 mV
PC TRACE RESISTANCE = 0.05 ?
sheet)
D = fraction of time the load is conducting (duty cycle)
Capacitive Load Power Dissipation
Figure 4. Switching Time Degradation Due to Negative
Feedback
The supply current vs. frequency and supply current vs
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 1 lists the
maximum safe operating frequency for several power
supply voltages when driving a 10,000pF load. More
Dissipation caused by a capacitive load is simply the
energy placed in, or removed from, the load capacitance
by the driver. The energy stored in a capacitor is
described by the equation:
E = 1/2 C V 2
accurate power dissipation figures can be obtained by
summing the three dissipation sources.
Given the power dissipation in the device, and the
thermal resistance of the package, junction operating
temperature for any ambient is easy to calculate. For
example, the thermal resistance of the 8-pin plastic DIP
package, from the data sheet, is 130°C/W. In a 25°C
VS
18V
15V
10V
5V
Max. Frequency
220kHz
300kHz
640kHz
2MHz
ambient, then, using a maximum junction temperature of
125°C, this package will dissipate 960mW.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the
device:
Table 1: MIC4451 Maximum Operating Frequency
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations
the 1/2 is removed. This equation also shows that it is
?
?
?
Load Power Dissipation (P L )
Quiescent power dissipation (P Q )
Transition power dissipation (P T )
good practice not to place more voltage on the capacitor
than is necessary, as dissipation increases as the
square of the voltage applied to the capacitor. For a
driver with a capacitive load:
Calculation of load power dissipation differs depending
on whether the load is capacitive, resistive or inductive.
P L = f C (V S ) 2
where:
f = Operating Frequency
C = Load Capacitance
V S = Driver Supply Voltage
October 2011
9
M9999-103111-B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4451BN | 功能描述:IC DRIVER MOSF 12A LO SIDE 8DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4451CT | 功能描述:IC DRIVER MOSFET 12A HS TO-220-5 RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4451CTL3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MIC4451YM | 功能描述:功率驱动器IC 12A Hi-Speed, Hi-Current Single MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4451YM TR | 功能描述:功率驱动器IC 12A Hi-Speed, Hi-Current Single MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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