- 您现在的位置：买卖IC网 > PDF目录20422 > MIC5013BM TR (Micrel Inc)IC DRIVER MOSF HI/LOW SIDE 8SOIC PDF资料下载
参数资料
| 型号： | MIC5013BM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 6/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF HI/LOW SIDE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 60µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 7 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC5013BMTR MIC5013BMTR-ND |
MIC5013
Block Diagram
V+
7
CHARGE
PUMP
500 ?
6 Gate
Micrel, Inc.
Input 1
LOGIC
CURRENT
SENSE
LATCH
MIC5013
V+
12.5V
Fault 8
Q
R
S
+
–
I2
+
3 Sense
V. REG
V TR I P
–
1k
4 Source
1k
5
Ground
Applications Information
Functional Description (refer to block diagram )
The various MIC5013 functions are controlled via a logic
block connected to the input pin 1. When the input is low,
all functions are turned off for low standby current and the
gate of the power MOSFET is also held low through 500Ω
to an N-channel switch. When the input is taken above the
turn-on threshold (3.5V typical), the N-channel switch turns
off and the charge pump is turned on to charge the gate of
the power FET. A bandgap type voltage regulator is also
turned on which biases the current sense circuitry.
The charge pump incorporates a 100kHz oscillator and
on-chip pump capacitors capable of charging 1nF to 5V
above supply in 60μs typical. The charge pump is capable
of pumping the gate up to over twice the supply voltage.
For this reason, a zener clamp (12.5V typical) is provided
between the gate pin 6 and source pin 4 to prevent exceed-
ing the V GS rating of the MOSFET at high supplies.
The current sense operates by comparing the sense volt-
age at pin 3 to an offset version of the source voltage at
pin 4. Current I2 ?owing in threshold pin 2 is mirrored and
returned to the source via a 1kΩ resistor to set the offset,
or trip voltage. When (V SENSE – V SOURCE ) exceeds V TRIP ,
the current sense trips and sets the current sense latch to
turn off the power FET. An integrating comparator is used
to reduce sensitivity to spikes on pin 3. The latch is reset
to turn the FET back on by “recycling” the input pin 1 low
and then high again.
A resistor R TH from pin 2 to ground sets I2, and hence V TRIP .
An additional capacitor C TH from pin 2 to ground creates a
higher trip voltage at turn-on, which is necessary to prevent
high in-rush current loads such as lamps or capacitors from
false-tripping the current sense.
2
Threshold
When the current sense has tripped, the fault pin 8 will be
high as long as the input pin 1 remains high. However, when
the input is low the fault pin will also be low.
Construction Hints
High current pulse circuits demand equipment and assembly
techniques that are more stringent than normal low current
lab practices. The following are the sources of pitfalls most
often encountered during prototyping: Supplies: many bench
power supplies have poor transient response. Circuits that
are being pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with a
supply that has poor ripple rejection, or a peaked transient
response. Monitor the power supply voltage that appears
at the drain of a high-side driver (or the supply side of the
load in a low-side driver) with an oscilloscope. It is not un-
common to ?nd bench power supplies in the 1kW class that
overshoot or undershoot by as much as 50% when pulse
loaded. Not only will the load current and voltage measure-
ments be affected, but it is possible to over-stress various
components—especially electrolytic capacitors—with pos-
sibly catastrophic results. A 10μF supply bypass capacitor
at the chip is recommended.
Residual Resistances: Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50mΩ power MOSFET for low drop, but
careless construction techniques could easily add 50 to
100mΩ resistance. Do not use a socket for the MOSFET. If
the MOSFET is a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A ?oating millivoltmeter can
identify connections that are contributing excess drop
under load.
MIC5013
6
July 2005
相关PDF资料 |
PDF描述 |
|---|---|
| MLK1005S3N9S | INDUCTOR MULTILAYER 3.9NH 0402 |
| SRN8040-330M | INDUCTOR POWER SHIELD 33UH SMD |
| EGM08DTKD | CONN EDGECARD 16POS DIP .156 SLD |
| ESC06DRXH-S734 | CONN EDGECARD 12POS DIP .100 SLD |
| SBG1640CT | DIODE SCHOTTKY CC 40V 16A D2-PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5013BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5013YM | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5013YM TR | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5013YN | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5014 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver |
发布紧急采购，3分钟左右您将得到回复。