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参数资料
| 型号： | MIC5013BM |
| 厂商： | Micrel Inc |
| 文件页数： | 7/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF HI/LO SIDE 8SOIC |
| 标准包装： | 95 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 60µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 7 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
MIC5013
Applications Information (Continued)
V LOAD
Micrel, Inc.
R =
ControlInput
R TH
10k ?
MIC5013
1 Input Fault 8
2 Thresh V+ 7
3 Sense Gate 6
V+ =7 to 15V
10μF
+
LOAD
R S =
TH
V TR I P
I L
2200
V TR I P
–1000
L
4 Source Gnd 5
IRF540
For this example:
I =20A (trip current)
V
TR I P
= 200mV
R S
10m ?
IRC 4LPW-5
(International Resistive Company)
Figure 2. Low-Side Driver
with Current Shunt
Circuit Topologies
The MIC5013 is suited for use in high- or low-side driver
applications with over-current protection for both current-
sensing and standard MOSFETs. In addition, the MIC5013
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in the
Test Circuit) are the slowest; their speed is re?ected in the
gate turn-on time speci?cations. The fastest drivers are the
low-side and bootstrapped high-side types. Load current
switching times are often much faster than the time to full
gate enhancement, depending on the circuit type, the MOS-
FET, and the load. Turn-off times are essentially the same
for all circuits (less than 10μs to V GS = 1V). The choice of
one topology over another is based on a combination of
considerations including speed, voltage, and desired system
characteristics. Each topology is described in this section.
Note that I L , as used in the design equations, is the load
current that just trips the over-current comparator.
Low-Side Driver with Current Shunt (Figure 2). The over-
current comparator monitors RS and trips if I L × R S exceeds
V TRIP . R is selected to produce the desired trip voltage.
As a guideline, keep V TRIP within the limits of 100mV and
500mV (R TH = 3.3kΩ to 20kΩ). Thresholds at the high end
offer the best noise immunity, but also compromise switch
drop (especially in low voltage applications) and power
dissipation.
The trip current is set higher than the maximum expected
load current—typically twice that value. Trip point accuracy
is a function of resistor tolerances, comparator offset (only
a few millivolts), and threshold bias voltage (V2). The val-
ues shown in Figure 2 are designed for a trip current of 20
amperes. It is important to ground pin 4 at the current shunt
R S , to eliminate the effects of ground resistance.
A key advantage of the low-side topology is that the load sup-
ply is limited only by the MOSFET BVDSS rating. Clamping
may be required to protect the MOSFET drain terminal from
2 Thresh
V+ 7
Sense Gate 6
V +
100mV+ V TR I P
ControlInput
MIC5013
1 Input Fault 8
R TH
20k ? 3
4 Source Gnd 5
V+ =24V
10μF +
R1=
1mA
R2=100 ?
R S =
I L
100 ?
IRF541
R TH =
2200
V TR I P
–1000
R S
For this example:
I L =10A (trip current)
*International Resistive Company
R1
24k ?
R2
18m ?
IRC 4LPW-5*
LOAD
V TR I P =100mV
Figure 3. High-Side Driver
with Current Shunt
July 2005
7
MIC5013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5013BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5013BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5013YM | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5013YM TR | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5013YN | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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