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参数资料
| 型号： | MIC5020BM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF LO SIDE HS 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 400ns |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 11 V ~ 50 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC5020BMTR MIC5020BMTR-ND |
MIC5020
Absolute Maximum Ratings
Supply Voltage (V DD ) ................................................... +55V
Input Voltage .................................................–0.5V to +15V
Sense Differential Voltage .......................................... ±6.5V
Micrel, Inc.
Operating Ratings
Supply Voltage (V DD ) ......................................+11V to +50V
Temperature Range
SOIC ....................................................... –40°C to +85°C
Sense + or Sense – to Gnd ...........................–0.5V to +50V
Fault Voltage ............................................................... +50V
Current into Fault ........................................................ 50mA
Timer Voltage (C T ) ...................................................... +5.5V
Electrical Characteristics
T A = 25°C, Gnd = 0V, V DD = 12V, Sense +,– = 0V, Fault = Open, C T = Open, Gate C L = 1500pF unless otherwise speci?ced
Symbol
Parameter
D.C. Supply Current
Input Threshold
Condition
V DD = 12V, Input = 0V
V DD = 50V, Input = 0V
V DD = 12V, Input = 5V
V DD = 50V, Input = 5V
Min
0.8
Typ
0.8
2
0.8
4
1.4
Max
2
10
2
25
2.0
Units
mA
mA
mA
mA
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Fault Output
Saturation Voltage
Fault Output Leakage
Current Limit Threshold
Input = 5V
Fault Current = 1.6mA
Note 1
Fault = 50V
Note 2
10
–1
30
20
0.15
0.01
50
40
0.4
+1
70
μA
V
μA
mV
t G(ON)
t G(OFF)
t DLH
t R
t DLH
t F
f max
Gate On Voltage
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Gate Fall Time
Maximum Operating Frequency
V DD = 12V
V DD = 50V
Sense Differential > 70mV
Sense Differential > 70mV, C T = 0pF
Note 3
Note 4
Note 5
Note 6
Note 7
10
14
2
10
100
11
15
5
20
400
700
900
500
150
18
10
50
800
1500
1500
1500
V
V
μs
μs
ns
ns
ns
ns
kHz
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
Voltage remains low for time affected by C T .
When using sense MOSFETs, it is recommended that R SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 11V (Gate ON voltage) to 10V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V from 2V.
Frequency where gate on voltage reduces to 10V with 50% input duty cycle.
July 2005
3
MIC5020
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