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参数资料
| 型号： | MIC5021BM |
| 厂商： | Micrel Inc |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET HISIDE HS 8SOIC |
| 标准包装： | 95 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 500ns |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 12 V ~ 36 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
MIC5021
Functional Description
Refer to the MIC5021 block diagram.
Input
A signal greater than 1.4V (nominal) applied to the MIC5021
INPUT causes gate enhancement on an external MOSFET
turning the MOSFET on.
An internal pull-down resistor insures that an open INPUT
remains low, keeping the external MOSFET turned off.
Gate Output
Rapid rise and fall times on the GATE output are possible
because each input state change triggers a one-shot which
activates a high-value current sink (10I 2 ) for a short time.
This draws a high current though a current mirror circuit
causing the output transistors to quickly charge or discharge
the external MOSFET’s gate.
A second current sink continuously draws the lower value
of current used to maintain the gate voltage for the selected
state.
An internal charge pump utilizes an external “boost” capacitor
connected between V BOOST and the source of the external
MOSFET. (Refer to typical application.) The boost capacitor
stores charge when the MOSFET is off. As the MOSFET
turns on, its source to ground voltage increases and is added
to the voltage across the capacitor, raising the V BOOST pin
voltage. The boost capacitor charge is directed through
the GATE pin to quickly charge the MOSFET’s gate to 16V
maximum above V DD . The internal charge pump maintains
the gate voltage.
Applications Information
The MIC5021 MOSFET driver is intended for high-side
switching applications where overcurrent limiting and high
speed are required. The MIC5021 can control MOSFETs
that switch voltages up to 36V.
High-Side Switch Circuit Advantages
High-side switching allows more of the load related com-
ponents and wiring to remain near ground potential when
compared to low-side switching. This reduces the chances
of short-to-ground accidents or failures.
Speed Advantage
The MIC5021 is about two orders of magnitude faster than
the low cost MIC5014 making it suitable for high-frequency
high-ef?ciency circuit operation in PWM (pulse width modu-
lation) designs used for motor control, SMPS (switch mode
power supply) and heating element control.
Switched loads (on/off) bene?t from the MIC5021’s fast
switching times by allowing use of MOSFETs with smaller
safe operating areas. (Larger MOSFETs are often required
when using slower drivers.)
Micrel, Inc.
An internal zener diode protects the external MOSFET by
limiting the gate to source voltage.
Sense Inputs
The MIC5021’s 50mV (nominal) trip voltage is created by
internal current sources that force approximately 5μA out of
SENSE + and approximately 15μA (at trip) out of SENSE –.
When SENSE – is 50mV or more below SENSE +, SENSE –
steals base current from an internal drive transistor shutting
off the external MOSFET.
Overcurrent Limiting
Current source I 1 charges C INT upon power up. An optional
external capacitor connected to C T is kept discharged through
a MOSFET Q1.
A fault condition (> 50mV from SENSE + to SENSE – ) causes
the overcurrent comparator to enable current sink 2I 1 which
overcomes current source I 1 to discharge C INT in a short
time. When C INT is discharged, the INPUT is disabled, which
turns off the gate output, and C INT and C T are ready to be
charged.
When the gate output turns the MOSFET off, the overcurrent
signal is removed from the sense inputs which deactivates
current sink 2I 1 . This allows C INT and the optional capacitor
connected to C T to recharge. A Schmitt trigger delays the
retry while the capacitor(s) recharge. Retry delay is increased
by connecting a capacitor to C T (optional).
The retry cycle will continue until the fault is removed or the
input is changed to TTL low.
If C T is connected to ground, the circuit will not retry upon a
Supply Voltage
The MIC5021’s supply input (V DD ) is rated up to 36V. The
supply voltage must be equal to or greater than the voltage
applied to the drain of the external N-channel MOSFET.
A 16V minimum supply is recommended to produce continu-
ous on-state, gate drive voltage for standard MOSFETs (10V
nominal gate enhancement).
When the driver is powered from a 12V to 16V supply, a
logic-level MOSFET is recommended (5V nominal gate
enhancement).
PWM operation may produce satisfactory gate enhancement
at lower supply voltages. This occurs when fast switching
repetition makes the boost capacitor a more signi?cant volt-
age supply than the internal charge pump.
July 2005
5
MIC5021
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| MIC5021BM TR | 功能描述:IC DRIVER MOSFET HISIDE HS 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5021BN | 功能描述:IC DRIVER MOSFET HI SIDE HS 8DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5021YM | 功能描述:功率驱动器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5021YM TR | 功能描述:功率驱动器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5021YM | 制造商:Micrel Inc 功能描述:Temperature Sensor IC 制造商:Micrel Inc 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
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