参数资料
型号: MIC5156-3.3YM
厂商: Micrel Inc
文件页数: 7/13页
文件大小: 271K
描述: IC REG CTRLR SGL 3.3V 8-SOIC
标准包装: 95
类型: 正,固定式
输出数: 1
输出电压: 3.3V
电流 - 电源: 2.7mA
输入电压: 3 V ~ 36 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 1096 (CN2011-ZH PDF)
其它名称: 576-2355
MIC5156-3.3YM-ND
August 2005
7
MIC5156/5157/5158
MIC5156/5157/5158
Micrel, Inc.
Functional Description
A Super LDO Regulator  is a complete regulator built around
Micrels Super LDO Regulator Controller.
Refer to Block Diagrams MIC5156, MIC5157, and
MIC5158.
Version Differences
The MIC5156 requires an external voltage for MOSFET gate
drive and is available in 3.3V xed output, 5V xed output, or
adjustable output versions. With 8-pins, the MIC5156 is the
smallest of the Super LDO Regulator Controllers.
The MIC5157 and MIC5158 each have an internal charge
pump which provides MOSFET gate drive voltage. The
MIC5157 has a selectable xed output of 3.3V, 5V, or 12V.
The MIC5158 may be congured for a xed 5V or adjustable
output.
Enable (EN)
With at least 3.0V on V
DD
, applying a TTL low to EN places
the controller in shutdown mode. A TTL high on EN enables
the internal bias circuit which powers all internal circuitry. EN
must be pulled high if unused. The voltage applied to EN may
be as high as 36V.
The controller draws less than 1礎 in shutdown mode.
Gate Enhancement
The Super LDO Regulator Controller manages the gate-
1.235V
Bandgap
Reference
V
CP
Clamp
Internal
Bias
Error
Amp
75mV
35mV
EA
S (Source)
I
LIMIT
Comparator
D (Drain)
[ I
LIMIT
]
G (Gate)
V
CP
V
DD
V
OUT
Comparator
to all
internal blocks
GND
Regulated
+3.6V Output
+5V Input
Q1
IRFZ44
R
S
3m&
1礔
16.6V
32k
10k
5V
FB
Oscillator
Charge Pump
Tripler
C1+  C1  C2+  C2
0.1礔
0.1礔
C1
C2
C3
LAG
19.1k
10.0k
EN
Enable
Shutdown
C
L
Block Diagram MIC5158
Block Diagram with External Components
Adjustable Power Supply, 3.6V Conguration
to-source enhancement voltage for an external N-channel
MOSFET (regulator pass element) placed between the supply
and the load. The gate-to-source voltage may vary from 1V
to 16V depending upon the supply and load conditions.
Because the source voltage (output) approaches the drain
voltage (input) when the regulator is in dropout and the
MOSFET is fully enhanced, an additional higher supply
voltage is required to produce the necessary gate-to-source
enhancement. This higher gate drive voltage is provided by
an external gate drive supply (MIC5156) or by an internal
charge pump (MIC5157 and MIC5158).
Gate Drive Supply Voltage (MIC5156 only)
The gate drive supply voltage must not be more than 14V
above the supply voltage (V
P
  V
DD
< 14V). The minimum
necessary gate drive supply voltage is:
 
V
P
 = V
OUT
 + V
GS
 + 1
where:
 
V
P
 = gate drive supply voltage
 
V
OUT
 = regulator output voltage
 
V
GS
 = gate-to-source voltage for full
 
    MOSFET gate enhancement
The error amplier uses the gate drive supply voltage to drive
the gate of the external MOSFET. The error amplier output
can swing to within 1V of V
P
.
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