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参数资料
| 型号： | MIC94001BLMT&R |
| 厂商： | MICREL INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 15 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LM, SOIC-8 |
| 文件页数： | 2/2页 |
| 文件大小： | 30K |
| 代理商： | MIC94001BLMT&R |
MIC94001
Micrel
6-38
August 1998
Electrical Characteristics T
A = 25°C unless noted. All values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
BDSS
Drain-Source Breakdown Voltage
V
GS = 0V, ID = 250A15
V
GS
Gate Threshold Voltage
V
DS = VGS, ID = 250A1
3
V
I
GSS
Gate-Body Leakage
V
DS = 0V, VGS = 15V, Note 2
100
nA
I
DSS
Zero Gate Voltage Drain Current
V
DS = 15V, VGS = 0V
25
A
V
DS = 15V, VGS = 0V, TJ = 125°C
250
A
I
D(ON)
On-State Drain Current
V
DS ≥ 10V, VGS = 10V, Note 1
5.5
A
R
DS(ON)
Drain-Source On-State Resist.
V
GS = 4.5V, ID = 50mA
0.35
0.40
g
FS
Forward Transconductance
V
DS = 15V, ID = 1A, Note 1
0.7
S
Note 1: Pulse Test: Pulse Width
≤ 300sec, Duty Cycle ≤ 2%
Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions.
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage ................................................ 15V
Gate-to-Source Voltage ................................................ 15V
Continuous Drain Current
T
A = 25°C ................................................................. 1.6A
T
A = 100°C .................................................................. 1A
Operating Juction Temperature ................. –55
°C to +150°
Storage Temperature ............................... –55
°C to +150°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.0
0.4
0.8
1.2
1.6
2.0
R
DS(ON)
(
)
I
D
(A)
On Resistance vs.
Drain Current
V
GS = 4.5V
V
GS = 10V
Note 1
Total Power Dissipation
T
A = 25°C ................................................................... 1W
T
A = 100°C .............................................................. 0.4W
Thermal Resistance
θ
JA ...................................................................................... 125°C/W
θ
JC ........................................................................................ 76°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300
°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.0
2.5
5.0
7.5 10.0 12.5 15.0
I D
(mA)
V
DS
(V)
Drain Characteristics
V
GS = 4.0
V
GS = 3.5
V
GS = 3.0
V
GS = 2.5
V
GS = 2.0
V
GS = 1.5
Note 1
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