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参数资料
| 型号： | MIC94030YM4 |
| 厂商： | MICREL INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SOT-143, 4 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 144K |
| 代理商： | MIC94030YM4 |
Micrel, Inc.
MIC94030/MIC94031
July 2006
3
M9999-071106
Absolute Maximum Ratings
(1)
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
TA = 25°C...................................................................1A
TA = 100°C..............................................................0.5A
Operating Junction Temperature ..............–55°C to +150°C
Storage Temperature ................................–55°C to +150°C
Total Power Dissipation
TA = 25°C...........................................................568mW
TA = 100°C.........................................................227mW
Thermal Resistance
θJA....................................................................220°C/W
θJC....................................................................130°C/W
Lead Temperature
1/16” from case, 10s.......................................... +300°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
VBDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A
13.5
V
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250A
0.6
1.0
1.4
V
IGSS
Gate-Body Leakage
VDS = 0V, VGS = 12V, Note 2, Note 3
1
A
RGS
Gate-Source Resistor
VDS = 0V, VGS = 12V, Note 2, Note 4
500
750
1000
k
CISS
Input Capacitance
VGS = 0V, VDS = 12V
100
pF
IDSS
Zero Gate Voltage Drain Current
VDS = 12V, VGS = 0V
25
A
VDS = 12V, VGS = 0V, TJ = 125°C
0.010
250
A
ID(ON)
On-State Drain Current
VDS = 10V, VGS = 10V, Note 5
6.3
A
RDS(ON)
Drain-Source On-State Resist
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
0.45
0.75
1.20
1.00
gFS
Forward Transconductance
VDS = 10V, ID = 200mA, Note 5
480
mS
Notes:
1. TA = 25°C unless noted. Substrate connected to source for all conditions.
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width ≤ 80sec, Duty Cycle ≤ 0.5%.
相关PDF资料 |
PDF描述 |
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| MIC94030YM4TR | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MIC94030BM4T&R | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MIC94031YM4TR | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MIC94051YM4TR | 1800 mA, 6 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC94030YM4 TR | 功能描述:MOSFET Dual P-Channel MOSFET (Lead Free) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MIC94030YM4TR | 制造商:RF Micro Devices Inc 功能描述: |
| MIC94030YM4-TR | 功能描述:MOSFET P-CH 16V 1A SOT-143 制造商:microchip technology 系列:TinyFET? 包装:剪切带（CT） 零件状态:有效 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:16V 电流 - 连续漏极（Id）（25°C 时）:1A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:450 毫欧 @ 100mA，10V 不同 Id 时的 Vgs（th）（最大值）:1.4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:100pF @ 12V 功率 - 最大值:568mW 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-253-4，TO-253AA 供应商器件封装:SOT-143 标准包装:1 |
| MIC94031 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:TinyFET P-Channel MOSFET |
| MIC94031BM4 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:TinyFET⑩ P-Channel MOSFET Preliminary Information |
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