参数资料
型号: MIC94031BM4 TR
厂商: Micrel Inc
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 16V 1A SOT-143
标准包装: 3,000
系列: TinyFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 16V
电流 - 连续漏极(Id) @ 25° C: 1A
开态Rds(最大)@ Id, Vgs @ 25° C: 450 毫欧 @ 100mA,10V
Id 时的 Vgs(th)(最大): 1.4V @ 250µA
输入电容 (Ciss) @ Vds: 100pF @ 12V
功率 - 最大: 568mW
安装类型: 表面贴装
封装/外壳: TO-253-4,TO-253AA
供应商设备封装: SOT-143
包装: 带卷 (TR)
其它名称: MIC94031BM4TR
Micrel, Inc.
Absolute Maximum Ratings (1)
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
T A = 25°C ...................................................................1A
T A = 100°C ..............................................................0.5A
Operating Junction Temperature .............. –55°C to +150°C
Storage Temperature ................................ –55°C to +150°C
MIC94030/MIC94031
Total Power Dissipation
T A = 25°C...........................................................568mW
T A = 100°C.........................................................227mW
Thermal Resistance
θ JA ....................................................................220°C/W
θ JC ....................................................................130°C/W
Lead Temperature
1/16” from case, 10s.......................................... +300°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
V BDSS
V GS
I GSS
R GS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate-Source Resistor
Condition (Note 1)
V GS = 0V, I D = 250μA
V DS = V GS , I D = 250μA
V DS = 0V, V GS = 12V, Note 2, Note 3
V DS = 0V, V GS = 12V, Note 2, Note 4
Min
13.5
0.6
500
Typ
1.0
750
Max
1.4
1
1000
Units
V
V
μA
k ?
C ISS
I DSS
I D(ON)
Input Capacitance
Zero Gate Voltage Drain Current
On-State Drain Current
V GS = 0V, V DS = 12V
V DS = 12V, V GS = 0V
V DS = 12V, V GS = 0V, T J = 125°C
V DS = 10V, V GS = 10V, Note 5
100
0.010
6.3
25
250
pF
μA
μA
A
R DS(ON)
g FS
Drain-Source On-State Resist
Forward Transconductance
V GS = 10V, I D = 100mA
V GS = 4.5V, I D = 100mA
V GS = 2.7V, I D = 100mA
V DS = 10V, I D = 200mA, Note 5
0.45
0.75
1.20
480
1.00
?
?
?
mS
Notes:
1. T A = 25°C unless noted. Substrate connected to source for all conditions.
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width ≤ 80μsec, Duty Cycle ≤ 0.5%.
July 2006
3
M9999-071106
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