参数资料
型号: MIC94053BC6 TR
厂商: Micrel Inc
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 6V 2A SC70-6
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 6V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 84 毫欧 @ 100mA,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
功率 - 最大: 270mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
其它名称: MIC94053BC6TR
MIC94053BC6TR-ND
MIC94052/53
Absolute Maximum Ratings (Note 1)
Drain-Source Voltage (V DS ) .......................................... –6V
Gate-Source Voltage (V GS ) ........................................... –6V
Continuous Drain Current (ID) Note 3
T A = 25°C ................................................................... ±2A
T A = 85°C ................................................................ ±1.4A
Pulsed Drain Current (I DP ) Note 3 ................................ ±6A
Continous Diode Current (I S ) Note 7 ........................ –50mA
Power Dissipation Note 3
SC-70-6 lead (T A = 85°C) .................................... 270mW
Ambient Storage Temperature (T S ) .......... –55°C to +150°C
ESD Rating Note 4
Electrical Characteristics
Operating Ratings (Note 2)
Input Voltage Range .........................................1.8V to 5.5V
Junction Temperature Range (T J ) ............ –40°C to +150°C
Package Thermal Impedance Note 3
θ JA SC-70-6 lead .............................................. 240°C/W
T A = 25°C, unless otherwise speci?ed. Bold values indicate –40°C ≤ T J ≤ +150°C.
Symbol Parameter Condition
Min
Typ
Max
Units
Static
V GS(th)
I GSS
Gate Threshold Voltage
Gate Body Leakage
(MIC94052 only)
V DS = V GS , I D = –250μA
V DS = 0V, V GS = –5.5V
–0.5
–1.2
100
V
nA
R GS
Gate-Source Resistance
(MIC94053 only)
V DS = 0V, V GS = –5.5V
250
400
550
k ?
I DSS Zero Gate Voltage Drain
Current
R DS(ON) Drain-Source On-Resistance
Note 8
Dynamic, Note 6
V DS = –5.5V, V GS = 0V
T J = +85°C
V GS = –4.5V, I DS = –100 mA
V GS = –3.6V, I DS = –100 mA
V GS = –2.5V, I DS = –100 mA
V GS = –1.8V, I DS = –100 mA
70
76
92
125
–1
–5
84
110
130
180
μA
μA
m ?
m ?
m ?
m ?
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = –5V, I D = –0.5A, V GS = –4.5V,
R GEN = 50 ?
V DD = –5V, I D = –0.5A, V GS = –4.5V,
R GEN = 50 ?
V DD = –5V, I D = –0.5A, V GS = –4.5V,
R GEN = 50 ?
V DD = –5V, I D = –0.5A, V GS = –4.5V,
R GEN = 50 ?
15
15
60
20
ns
ns
ns
ns
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
Note 7.
Note 8.
T A = 25°C unless otherwise noted. Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical
speci?cations do not apply when operating the device outside of its operating ratings.
This device is not guaranteed to operate beyond its speci?ed operating rating.
Mounted on 1 square-inch pad of 2 oz. copper.
IC devices are inherently ESD sensitive. Handling precautions required.
Pulse test; pulse width = 300μs, duty cycle = 2%.
Guaranteed by design.
Body diode current conduction is not recommended.
Ensure that all drain pins are connected together to optimize R DS(ON) perfomance.
June 2008
3
M9999-060508
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