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参数资料
| 型号： | MID300-12A4 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT RBSOA 1200V 330A Y3-DCB |
| 标准包装： | 2 |
| IGBT 类型： | NPT |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，200A |
| 电流 - 集电极 (Ic)（最大）： | 330A |
| 电流 - 集电极截止（最大）： | 13mA |
| Vce 时的输入电容 (Cies)： | 13nF @ 25V |
| 功率 - 最大： | 1380W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y3-DCB |
| 供应商设备封装： | Y3-DCB |
MII 300-12A4
MID 300-12A4
MDI 300-12A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
I C25 = 330 A
V CES = 1200 V
V CE(sat) typ. = 2.2 V
8
MII 300-12A4
T1
D1
3
MID 300-12A4
3
D1
MDI 300-12A4
3
T1
D11
8
1
2
3
11
10
9
8
9
T2
D2
1
T2
D12
1
9
D2
1
11
11
E72873
10
2
10
2
2
IGBTs T1 - T2
Features
Symbol
V CES
V GES
I C25
I C80
I CM
V CEK
t SC
(SCSOA)
P tot
Conditions
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 3.3 ? ; T VJ = 125°C
RBSOA CLAMPED INDUCTIVE LOAD; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 3.3 ?
T VJ = 125°C; NON-REPETITIVE
T C = 25°C
Maximum Ratings
1200 V
± 20 V
330 A
220 A
400 A
V CES
10 μS
1380 W
? NPT IGBT TECHNOLOGY
? LOW SWITCHING LOSSES
? SWITCHING FREQUENCY UP TO 30 KHZ
? SQUARE RBSOA, NO LATCH UP
? HIGH SHORT CIRCUIT CAPABILITY
? POSITIVE TEMPERATURE COEFfiCIENT FOR
easy parallelling
? MOS INPUT, VOLTAGE CONTROLLED
? ULTRA FAST FREE WHEELING DIODES
? PACKAGE WITH DCB CERAMIC BASE PLATE
? ISOLATION VOLTAGE 4800 V
? UL REGISTERED E72873
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, UNLESS OTHERWISE SPECIfiED)
Advantages
? SPACE AND WEIGHT SAVINGS
? REDUCED PROTECTION CIRCUITS
V CE(sat)
V GE(th)
I CES
I C = 200 A; V GE = 15 V
I C = 8 MA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
min.
4.5
typ.
2.2
20
max.
2.7
6.5
13
V
V
mA
mA
Applications
? AC AND DC MOTOR CONTROL
? AC SERVO AND ROBOT DRIVES
? POWER SUPPLIES
? WELDING INVERTERS
I GES
V CE = 0 V; V GE = ± 20 V
±800
nA
t d(on)
t r
t d(off)
t f
E on
E off
INDUCTIVE LOAD
V CE = 600 V; I C = 200 A
V GE = ± 15 V; R G = 3.3 ?
T VJ = 125°C
100
60
600
90
32
29
ns
ns
ns
ns
MJ
MJ
C ies
C oes
C res
V CE = 25 V; V GE = 0 V; F = 1 MHZ
13
2
1
nF
nF
nF
R thJC
R thJH
(PER IGBT)
WITH HEATSINK COMPOUND
0.18
0.09
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090812a
1-4
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