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参数资料
| 型号： | MIE-516A2U |
| 厂商： | Unity Opto Technology |
| 英文描述： | AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| 中文描述： | 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极管 |
| 文件页数： | 2/2页 |
| 文件大小： | 29K |
| 代理商： | MIE-516A2U |
MIE-516A2U
Optical-Electrical Characteristics
Parameter
Test Conditions
I
F
=20mA
I
F
=50mA
I
F
=200mA
V
R
= 5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
Symbol
Ie
Min.
Typ .
4
1.3
1.65
Max.
-
1.5
2.0
100
Unit
mW/sr
Radiant Intensity
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
I
R
λ
λ
2θ
1/2
μ
A
nm
nm
deg.
940
50
16
-
-
Typical Optical-Electrical Characteristic Curves
11/17/2000
V
V
F
Forward Voltage
@ T
A
=25
o
C
Unity Opto Technology Co., Ltd.
FIG.6 RADIATION DIAGRAM
0.5
0.3
0.1
0.2
0.4
0.6
30°
40°
90°
70°
80°
60°
50°
1.0
0.9
0.8
R
0° 10° 20°
-55 -25
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
3
0
25
50
75 100 125
100
0
50
60
70
80
90
F
F
0
1
2
3
4
5
0
20
40
60
80
100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
O
V
F
=
0
0.5
1
1.5
2
2.5
-40
Ambient Temperature T
A
(
o
C)
FIG.4 RELATIVE RADIANT INTENSITY
VS.AMBIENT TEMPERATURE
-20
0
20
40
60
O
F
=
0
20
40
60
80
100
0.8
1.2
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
1.6
2
2.4
2.8
F
0
0.5
1
840
940
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
R
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| MIE-516A4U | AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIE-516A4U | 制造商:UOT 制造商全称:Unity Opto Technology 功能描述:AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| MIE-516L3U | 制造商:UOT 制造商全称:Unity Opto Technology 功能描述:GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| MIE-524A4 | 制造商:UOT 制造商全称:Unity Opto Technology 功能描述:AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| MIE-524H4 | 制造商:UOT 制造商全称:Unity Opto Technology 功能描述:GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| MIE-524L3 | 制造商:UOT 制造商全称:Unity Opto Technology 功能描述:GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
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