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参数资料
| 型号： | MIE-824L3 |
| 厂商： | Unity Opto Technology |
| 英文描述： | GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
| 中文描述： | 砷化镓高功率的T 1 3 / 4包装红外发光二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 31K |
| 代理商： | MIE-824L3 |
AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-824A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coation chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intesity
l
Peak wavelength
λ
p
= 940 nm
l
Good spectral matching to si-photodetector
l
Radiant angle: 120°
Absolute Maximum Ratings
@ T
A
=25
o
C
Unit
Parameter
Maximum Rating
Power Dissipation
120
mW
Peak Forward Current
1
A
Continuous Forward Current
100
mA
Reverse Voltage
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
Unit: inches
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
A
C
2.54 NOM.
(.100)
SEE NOTE 3
SEE NOTE 2
φ
5.00
(.197)
1.00
(.039)
5.80
(.228)
0.50 TYP.
(.020)
1.00MIN.
(.039)
4.30
(.169)
23.40 MIN.
(.921)
FLAT DENOTES CATHODE
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