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参数资料
| 型号： | MIXA40WB1200TED |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封装： | E2-PACK-24 |
| 文件页数： | 1/8页 |
| 文件大小： | 244K |
| 代理商： | MIXA40WB1200TED |
2010 IXYS All rights reserved
1 - 8
20100629d
MIXA40WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Single Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES = 1200 V
V
CES = 1200 V
I
DAVM25 =
150 A I
C25
= 28 A I
C25
= 60 A
I
FSM
= 320 A V
CE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 sec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
SONIC diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and
resonant-mode power supplies
Package:
"E2-Pack" standard outline
Insulated copper base plate
Soldering pins for PCB mounting
Temperature sense included
Part name (Marking on product)
MIXA40WB1200TED
E 72873
21
22
1
D12
2
D13
D7
T7
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
D15
D11
D14
D16
3
23
24
14
7
16
15
11
10
18
17
12
6
20
19
13
5
4
NTC
8
9
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| MIXA60W1200TED | 功能描述:IGBT 模块 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA60WB1200TEH | 功能描述:IGBT 模块 1200V XPT CBI XPT IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA60WH1200TEH | 功能描述:IGBT 模块 1200V XPT CBI XPT IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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