参数资料
型号: MIXA80WB1200TEH
厂商: IXYS CORP
元件分类: IGBT 晶体管
英文描述: 120 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-35
文件页数: 4/8页
文件大小: 564K
代理商: MIXA80WB1200TEH
2010 IXYS All rights reserved
4 - 8
20100629c
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitive reverse voltage
T
VJ =
25°C
1600
V
I
FAV
I
DAVM
average forward current
max. average DC output current
sine 180°
T
C =
80°C
rect.; d = 1/
3
T
C =
80°C
94
265
A
I
FSM
max. forward surge current
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
1100
970
A
I2t
I2t value for fusing
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
6000
4700
A2s
P
tot
total power dissipation
T
C =
25°C
250
W
V
F
forward voltage
I
F = 150 A
T
VJ =
25°C
T
VJ = 125°C
1.3
1.6
V
I
R
reverse current
V
R = VRRM
T
VJ =
25°C
T
VJ = 125°C
0.05
2.0
0.1
mA
R
thJC
thermal resistance junction to case
(per diode)
0.5
K/W
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
R
25
B
25/50
resistance
T
C =
25°C
4.75
5.0
3375
5.25
k
W
K
Module
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
125
150
125
°C
V
ISOL
isolation voltage
I
ISOL < 1 mA; 50/60 Hz
3000
V~
CTI
comparative tracking index
200
M
d
mounting torque (M5)
3
6
Nm
d
S
d
A
creep distance on surface
strike distance through air
6
mm
R
pin-chip
resistance pin to chip
5
mW
R
thCH
thermal resistance case to heatsink
with heatsink compound
0.01
K/W
Weight
300
g
Equivalent Circuits for Simulation
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
0
R
0
rectifier diode
D8 - D13
T
VJ = 150°C
0.87
2.7
V
m
W
V
0
R
0
IGBT
T1 - T6
T
VJ = 150°C
1.1
17.9
V
m
W
V
0
R
0
free wheeling diode
D1 - D6
T
VJ = 150°C
1.09
9.1
V
m
W
V
0
R
0
IGBT
T7
T
VJ = 150°C
1.1
40
V
m
W
V
0
R
0
free wheeling diode
D7
T
VJ = 150°C
1.2
27.0
V
m
W
I
V
0
R
0
T
C = 25°C unless otherwise stated
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