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参数资料
| 型号： | MJ10005 |
| 厂商： | Boca Semiconductor Corp. |
| 英文描述： | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
| 中文描述： | 开关模式电源系列NPN硅达林顿晶体管的基射极加速比二极管 |
| 文件页数： | 4/8页 |
| 文件大小： | 229K |
| 代理商： | MJ10005 |
4
Motorola Bipolar Power Transistor Device Data
IC(pk)
t
t1
tf
t
IC
VCE
T
C
V
I
C
VCEO(sus)
VCEX(sus) AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180
μ
H
Rcoil = 0.05
VCC = 20 V
Vclamp = Rated VCEX Value
VCC = 250 V
RL = 25
Pulse Width = 50
μ
s
t2
TIME
tf CLAMPED
VCE or
Vclamp
tf UNCLAMPED
t2
20
1
0
PW Varied to Attain
IC = 250 mA
2
INDUCTIVE TEST CIRCUIT
INDUCTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
Lcoil (ICpk)
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
1
2
TUT
RL
VCC
t1
≈
VCC
t2
≈
Lcoil (ICpk)
VClamp
Table 1. Test Conditions for Dynamic Performance
Figure 7. Inductive Switching Measurements
TIME
tsv
trv
tfi
tti
90% Vclamp
tc
90% IB1
IB
10%
IC
2%
IC
Vclamp
IC
Vclamp
10%
Vclamp
90% IC
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage wa-
veforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the turn–off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.
相关PDF资料 |
PDF描述 |
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| MJ10005 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJ10005 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10005 | POWER TRANSISTORS(20A,350-400V,175W) |
| MJ10007 | 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ10005 | 制造商:UNBRANDED 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ10006 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
| MJ10007 | 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 400V 10A 3-Pin(2+Tab) TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:150W; DC Collector Current:10A; DC Current Gain hFE:30; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10007 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10008 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
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