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参数资料
| 型号： | MJ10009 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS |
| 中文描述： | 20 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/8页 |
| 文件大小： | 235K |
| 代理商： | MJ10009 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(IC = 2 A, Vclamp = Rated VCEX, TC = 100 C, VBE(off) = 5 V)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150 C)
ICEV
500
—
—
mAdc
(VCE = Rated VCEV, RBE = 50
, TC = 100 C)
—
—
5
Emitter Cutoff Current
IEBO
—
—
175
mAdc
(IC = 5 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 500 mAdc, TC = 100 C)
VCE(sat)
40
30
—
—
400
300
Vdc
Base–Emitter Saturation Voltage
VBE(sat)
—
—
2.5
Vdc
(IF = 10 Adc)
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
hfe
—
—
—
8
(VCC = 250 Vdc, IC = 10 A,
IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25
s
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300
μ
s, Duty Cycle
≤
2%.
相关PDF资料 |
PDF描述 |
|---|---|
| MJ10009 | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
| MJ10009 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJ10009 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10009 | POWER TRANSISTORS(20A,400-500V,175W) |
| MJ1000 | Medium-Power Complementary Silicon Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ1000FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 100 Ohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ1000FE-R52 | 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 100 Ohm 1% 200 Volt |
| MJ1001 | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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