参数资料
型号: MJ10012
厂商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(10A,400V,175W)
中文描述: 功率晶体管(10A条,为400V,175W的)
文件页数: 3/6页
文件大小: 191K
代理商: MJ10012
3
Motorola Bipolar Power Transistor Device Data
,
I
μ
V
V
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005
0.01
0.02
0.05
1
2
2.5
2
1.5
1
TJ = 25
°
C
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Cutoff Region
103
102
101
100
10–1
IC = ICES
25
°
C
REVERSE
–0.2
FORWARD
Figure 5. Collector–Emitter Saturation Voltage
2.2
IC, COLLECTOR CURRENT (AMP)
0.20.1
1.8
1.4
1
0.6
Figure 6. Base–Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
2.4
2
1.6
1.2
IC = 0.5 A
10 A
3
IC/IB = 5
– 30
°
C
25
°
C
150
°
C
25
°
C
TJ = – 30
°
C
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 6 V
0.1
0.3
0.5
0.7
1
2
5
7
3
10
VCE = 250 V
TJ = 150
°
C
75
°
C
0
+0.2
+0.4
+0.8
+0.6
6
0.2
0.1
0.5
TJ = 150
°
C
V
V
1
2
0.3
5
7
10
0.2
3
0.7
0.5
0.2
10
7
5
Figure 7. Turn–Off Switching Time
IC, COLLECTOR CURRENT (AMP)
3
2
1
0.5
0.1
0.5 0.7
TJ = 25
°
C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
t
μ
tf
ts
0.2
0.3
1
2
5
7
3
10
20
0.7
2000
0.1
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
2
3
5
10
700
500
100
70
50
30
h
TJ = 150
°
C
25
°
C
30
°
C
VCE = 3 Vdc
VCE = 6 Vdc
200
300
1000
7
25
°
C
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相关代理商/技术参数
参数描述
MJ10012 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR
MJ10013 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W)
MJ10014 制造商:undefined 功能描述:
MJ10015 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10015 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3