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参数资料
| 型号： | MJ1001 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | METAL, TO-3, 2 PIN |
| 文件页数： | 1/59页 |
| 文件大小： | 361K |
| 代理商： | MJ1001 |
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3–423
Motorola Bipolar Power Transistor Device Data
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
MAXIMUM RATINGS
Rating
Symbol
MJ1000
MJ1001
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
90
0.515
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.94
_C/W
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 4.0 k
≈ 60
PNP
MJ900
MJ901
BASE
EMITTER
COLLECTOR
≈ 4.0 k
≈ 60
NPN
MJ1000
MJ1001
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJ1000
MJ1001
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
*
*Motorola Preferred Device
NPN
CASE 1–07
TO–204AA
(TO–3)
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MJ10022 | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ3000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ3281A | 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ1302A | 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ10012 | 制造商:NTE Electronics 功能描述:NPN Silicon Power Darlington Transistor, 400 Volts, 175 Watts, 10 A 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 400V 10A 3-Pin(2+Tab) TO-204AA 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 8V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; Power Dissipation Pd:175W; DC Collector Current:10A; DC Current Gain hFE:300; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10012 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR |
| MJ10013 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W) |
| MJ10014 | 制造商:undefined 功能描述: |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
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