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参数资料
| 型号： | MJ11013LEADFREE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | MJ11013LEADFREE |
www.centr alsemi.com
Power Transistors
TO-3 Case
Shaded areas indicate Darlington.
TYPE NO.
IC
PD
BVCBO
BVCEO
hFE
@ IC VCE(SAT) @ IC
fT
(A)
(W)
(V)
(A)
(V)
(A)
(MHz)
NPN
PNP
MAX
MIN
MAX
MIN
2N3055
MJ2955
15
115
100
60
5.0
- -
10
3.0
10
2.5
2N3442
10
117
160
140
20
70
3.0
5.0
10
- -
2N3713
2N3789
10
150
80
60
15
- -
3.0
1.0
5.0
4.0
2N3714
2N3790
10
150
100
80
15
- -
3.0
1.0
5.0
4.0
2N3715
2N3791
10
150
80
60
30
- -
3.0
1.0
5.0
4.0
2N3716
2N3792
10
150
100
80
30
- -
3.0
1.0
5.0
4.0
2N3771
30
150
50
40
15
60
15
2.0
15
- -
2N3772
20
150
100
60
15
60
10
1.4
10
- -
2N3773
2N6609
16
150
160
140
15
60
8.0
4.0
16
- -
2N4913
2N4904
5.0
87.5
40
7.0
- -
5.0
1.5
5.0
4.0
2N4914
2N4905
5.0
87.5
60
7.0
- -
5.0
1.5
5.0
4.0
2N4915
2N4906
5.0
87.5
80
7.0
- -
5.0
1.5
5.0
4.0
2N5067
2N4901
5.0
87.5
40
7.0
- -
5.0
1.5
5.0
4.0
2N5068
2N4902
5.0
87.5
60
7.0
- -
5.0
1.5
5.0
4.0
2N5069
2N4903
5.0
87.5
80
7.0
- -
5.0
1.5
5.0
4.0
2N5301
2N4398
30
200
40
15
60
15
4.0
30
4.0
2N5302
2N4399
30
200
60
15
60
15
4.0
30
4.0
2N5303
2N5745
20
200
80
15
60
10
2.0
20
2.0
2N5629
2N6029
16
200
100
25
100
8.0
2.0
16
1.0
2N5632
2N6229
10
150
100
25
100
5.0
2.0
10
1.0
2N5877
2N5875
10
150
60
4.0
- -
10
3.0
10
4.0
2N5878
2N5876
10
150
80
4.0
- -
10
3.0
10
4.0
2N5881
2N5879
15
160
60
4.0
- -
15
4.0
15
4.0
2N5882
2N5880
15
160
80
4.0
- -
15
4.0
15
4.0
2N5885
2N5883
25
200
60
20
100
10
4.0
25
4.0
2N5886
2N5884
25
200
80
20
100
10
4.0
25
4.0
2N6055
2N6053
8.0
100
60
750
18,000
4.0
3.0
8.0
4.0
2N6056
2N6054
8.0
100
80
750
18,000
4.0
3.0
8.0
4.0
2N6057
2N6050
12
150
60
750
18,000
6.0
3.0
12
4.0
2N6058
2N6051
12
150
80
750
18,000
6.0
3.0
12
4.0
2N6059
2N6052
12
150
100
750
18,000
6.0
3.0
12
4.0
2N6246
15
125
70
60
20
100
7.0
2.5
15
4.0
2N6247
15
125
90
80
20
100
6.0
3.5
15
4.0
(6-December 2004)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ11014 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 30 Amp Darlington Transistors NPN |
| MJ11015 | 功能描述:达林顿晶体管 30A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11015 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11015_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High-Current Complementary Silicon Transistors |
| MJ11015G | 功能描述:达林顿晶体管 30A 120V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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