- 您现在的位置：买卖IC网 > PDF目录95944 > MJ11016 (MOTOROLA INC) 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA PDF资料下载
参数资料
| 型号： | MJ11016 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 1/4页 |
| 文件大小： | 157K |
| 代理商： | MJ11016 |
1
Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
Monolithic Construction with Built–in Base Emitter Shunt Resistor
Junction Temperature to +200_C
MAXIMUM RATINGS
Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
Collector–Emitter Voltage
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25_C
Derate above 25
_C @ TC = 100_C
PD
200
1.15
Watts
W/
_C
Operating Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.87
_C/W
Maximum Lead Temperature for
Soldering Purposes for
v 10 Seconds.
TL
275
_C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
PNP
MJ11013
MJ11015
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
NPN
MJ11012
MJ11014
MJ11016
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11012/D
Motorola, Inc. 1995
MJ11013
MJ11015
MJ11012
MJ11014
MJ11016
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
*Motorola Preferred Device
PNP
NPN
*
CASE 1–07
TO–204AA
(TO–3)
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MJ11031R1 | 50 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| MJ11032R1 | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ11032 | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| MJ11033R1 | 50 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| MJ11028R1 | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ11016 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11016G | 功能描述:达林顿晶体管 30A 120V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11017 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 PNP 150V -15A 175W BEC |
| MJ11018 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11019 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor |
发布紧急采购，3分钟左右您将得到回复。