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参数资料
| 型号： | MJ11030 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
| 中文描述： | 50 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 文件页数： | 1/4页 |
| 文件大小： | 153K |
| 代理商： | MJ11030 |
1
Motorola Bipolar Power Transistor Device Data
$!!# #!%
!""#!"
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated IC
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
ICM
100
Base Current — Continuous
Peak
IB
PD
2
Adc
Total Power Dissipation @ TC = 25 C
300
Watts
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈
3.0 k
≈
25
PNP
MJ11029
MJ11031
MJ11033
BASE
EMITTER
COLLECTOR
≈
3.0 k
≈
25
NPN
MJ11028
MJ11030
MJ11032
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11028/D
50 AMPERE
COMPLEMENTARY
SILICON
DARLINGTON
POWER TRANSISTORS
60–120 VOLTS
300 WATTS
*Motorola Preferred Device
CASE 197A–05
TO–204AE (TO–3)
相关PDF资料 |
PDF描述 |
|---|---|
| MJ11032 | Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators |
| MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11030 | 4 Pin, MFP, Pin Pitch 1.27mm, Photdarlington Detector, CTR 600 min @ 1mA, 2V Optocoupler |
| MJ11028 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ11030G | 功能描述:达林顿晶体管 BIP NPN 50A 90V FG RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11031 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTOR(50A,60-120V,300W) |
| MJ11032 | 功能描述:达林顿晶体管 50A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11032 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11032G | 功能描述:达林顿晶体管 50A 120V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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